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  charge2.0 Datasheet PDF File

For charge2.0 Found Datasheets File :: 334    Search Time::2.109ms    
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    IPG20N06S2L-50

Infineon Technologies AG
Part No. IPG20N06S2L-50
OCR Text ... - ns Reverse recovery charge2, 4) 1) Q rr - 24 - nC Current is limited by bondwire; with an R thJC =2.9 K/W the...0 page 3 2009-09-07 IPG20N06S2L-50 1 Power dissipation P tot = f(T C); V GS 6 V; one ch...
Description OptiMOS Power-Transistor

File Size 160.58K  /  9 Page

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    IPB100P03P3L-04 IPP100P03P3L-04 IPI100P03P3L-04

Infineon Technologies AG
Part No. IPB100P03P3L-04 IPP100P03P3L-04 IPI100P03P3L-04
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 55 - nC Current is limited by bondwire; with an R thJC = 0.65 K/W the chip is able to carry I D=-195A at 25C. For detailed information see Application Note ANPS071E at ww...
Description 100 A, 30 V, 0.004 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB GREEN, PLASTIC, TO-263, 3 PIN
OptiMOS-P Trench Power-Transistor

File Size 189.55K  /  9 Page

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    SSM9915

SeCoS Halbleitertechnologie GmbH
Part No. SSM9915
OCR Text ..._ _ _ _ _ _ m[ Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fa...0.78 nC ID=10A VDS=16V VGS= 4.5V _ _ _ _ VDD=10V ID=10A nS VGS=5 V RG=3.3[ RD=1 [ 58...
Description N-Channel Enhancement Mode Power Mos.FET

File Size 601.35K  /  4 Page

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    IPP22N03S4L-15

Infineon Technologies AG
Part No. IPP22N03S4L-15
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 10 - nC Current is limited by bondwire; with an R thJC = 4.9K/W the ch...0 page 3 2007-03-09 IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 1 Power dissipation P to...
Description OptiMOS-T2 Power-Transistor

File Size 186.68K  /  9 Page

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    STT3981

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
Part No. STT3981
OCR Text ...0.84 -1.1 Dynamic Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Time Fall Tim...0.52 1.02 50 40 168 64 450 60 47 7.5 65 60 180 75 - nC ID = -1.9 A VDS = -10 V VGS = -4.5 V...
Description P-Channel Enhancement Mode Mos.FET

File Size 250.69K  /  5 Page

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    IPD50N03S2-07

Infineon Technologies AG
Part No. IPD50N03S2-07
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 50 - nC Current is limited by bondwire; with an R thJC = 1.1K/W the ch...0 page 3 2006-07-18 IPD50N03S2-07 1 Power dissipation P tot = f(T C); V GS 6 V 2 Dra...
Description OptiMOS Power-Transistor

File Size 148.93K  /  8 Page

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    IPD50N03S2L-06

Infineon Technologies AG
Part No. IPD50N03S2L-06
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 50 - nC Current is limited by bondwire; with an R thJC = 1.1K/W the ch...0 page 3 2006-07-18 IPD50N03S2L-06 1 Power dissipation P tot = f(T C); V GS 6 V 2 Dr...
Description OptiMOS Power-Transistor

File Size 149.84K  /  8 Page

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    IPD50N03S4L-06

Infineon Technologies AG
Part No. IPD50N03S4L-06
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 14 - nC Current is limited by bondwire; with an R thJC = 2.7K/W the ch...0 page 3 2008-08-05 IPD50N03S4L-06 1 Power dissipation P tot = f(T C); V GS 6 V 2 Dr...
Description OptiMOS-T2 Power-Transistor

File Size 159.63K  /  9 Page

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    IPD50N06S4L-08

Infineon Technologies AG
Part No. IPD50N06S4L-08
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 32 - nC Current is limited by bondwire; with an R thJC = 2.1K/W the ch...0 page 3 2009-03-24 IPD50N06S4L-08 1 Power dissipation P tot = f(T C); V GS 6 V 2 Dr...
Description OptiMOS-T2 Power-Transistor

File Size 161.12K  /  9 Page

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    IPD50P03P4L-11

Infineon Technologies AG
Part No. IPD50P03P4L-11
OCR Text ... - ns Reverse recovery charge2) 1) Q rr - 26 - nC Current is limited by bondwire; with an R thJC = 2.6K/W the ch...0 50 100 150 200 40 30 30 20 20 10 10 0 0 0 50 100 150 200 T C [C] T C [C...
Description OptiMOS-P2 Power-Transistor

File Size 157.80K  /  9 Page

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For charge2.0 Found Datasheets File :: 334    Search Time::2.109ms    
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