8a 600v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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8a 600v Datasheet PDF File

For 8a 600v Found Datasheets File :: 1191 Search Time::1.953ms
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				FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2SK2215-01S 2SK2215-01L
OCR Text	...channel MOS-FET 600v 1,2 8a 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unles...
Description	N-channel MOS-FET
File Size	204.41K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4BC15UD
OCR Text	... = 2.02v @v ge = 15v, i c = 7.8a parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 2.7 r q jc junction-...600v CCC CCC 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.5 1.8 ...
Description	600v UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
File Size	262.42K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IPD60R380C6
OCR Text	....480V VDD=400 V, VGS=13 V, ID=4.8a, RG= 3.4 (see table 20) Fall time tf 9 1) Co(er) is a fixed capacitance that gives the same stored en...600v CoolMOSTM C6 Power Transistor IPx60R380C6 Electrical characteristics Table 8 Parameter G...
Description	10.6 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Metal Oxide Semiconductor Field Effect Transistor
File Size	2,035.33K / 19 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4BC15UD
OCR Text	...yp. = 2.02V @VGE = 15V, IC = 7.8a Benefits * Best Value for Appliance and Industrial Applications * High noise immune "Positive Only" g...600v 1400 VGE = 0V, VCE = 600v, TJ = 150C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150C 100 nA VGE = 20V ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8a)
File Size	215.70K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4BC15UD-L IRG4BC15UD-S
OCR Text	...yp. = 2.02V @VGE = 15V, IC = 7.8a Benefits * Best Value for Appliance and Industrial Applications * High noise immune "Positive Only" g...600v 1400 VGE = 0V, VCE = 600v, TJ = 150C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150C 100 nA VGE = 20V ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8a) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600v电压的Vce（on）典\u003d 2.02V，@和VGE \u003d 15V的，集成电路\u003d 7.8a 600v UltraFast 10-30 kHz Copack IGBT in a TO-262 package 600v UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
File Size	208.87K / 12 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	ISL9R860P2 ISL9R860S3S
OCR Text	8a, 600v StealthTM Diode General Description The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recove...
Description	8a 600v Stealth Diode
File Size	122.94K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] SAMSUNG[Samsung semiconductor] Fairchild Semiconductor Corporation SAMSUNG SEMICONDUCTOR CO. LTD. Fairchild Semiconductor, Corp. Samsung Semiconductor Co., Ltd.
Part No.	ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD.-ISL9860PF2 R860PF2 ISL9R860PF2NL
OCR Text	8a, 600v StealthTM Diode General Description The ISL9R860PF2 is a StealthTM diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRRM) and excep...
Description	8a, 600v Stealth⑩ Diode 8a 600v Stealth Diode 8a, 600v Stealth Diode 8a条，600v的隐形二极管
File Size	113.22K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCP16N60
OCR Text	... VGS, ID = 250A VGS = 10V, ID = 8a VDS = 40V, ID = 8a VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) Min 600 -------3.0 ----------(Note 4, 5)...600v N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 1...
Description	600v N-Channel MOSFET
File Size	846.28K / 8 Page	View it Online	Download Datasheet

				BI
Part No.	7721
OCR Text	...BENEFITS 22A 500V IGBTs with 8a 600v ultrafast diodes 32A 600v IGBTs with 25A 600v hyperfast diodes * Saves significant space and assembly time * Modern design reduces heatsink cost * Low cost * Thin package (.200) easily fits between...
Description	H Bridge Power Module
File Size	114.93K / 5 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	K2027
OCR Text	8a 80W > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = 30V Guarantee A...600v Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30...
Description	Search --To 2SK2027
File Size	225.39K / 2 Page	View it Online	Download Datasheet

For 8a 600v Found Datasheets File :: 1191 Search Time::1.953ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |