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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
FS50UMJ-3 FS50UMJ-2
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OCR Text |
... Reverse recovery time
VDD = 80v, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s
...1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE... |
Description |
HIGH-SPEED SWITCHING USE
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File Size |
39.81K /
4 Page |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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Part No. |
FS50UMJ-3
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OCR Text |
... Reverse recovery time
VDD = 80v, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s
...1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE... |
Description |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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File Size |
44.89K /
4 Page |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
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OCR Text |
...AU) CISS COSS CRSS RJC
VDS = 80v, VGS = 0V VGS = 20V VGS = 12V, ID = 39A ID = 25A, VGS = 12V
Gate to Source Leakage Current
Drain t...1.28, VGS = 12V, RGS = 2.35
4-2
FSYA150D, FSYA150R
Source to Drain Diode Specifications
PARA... |
Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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File Size |
57.05K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRFI1310G
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OCR Text |
...DS = 100V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 110 ID = 25A 18 nC VDS = 80v 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 4.... |
Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A) Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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File Size |
319.89K /
8 Page |
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MSK[M.S. Kennedy Corporation]
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Part No. |
MSK3014
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OCR Text |
...e 1 1 1 1 1 1 1 1 1 ID=9.0A VDS=80v VGS=10V VDD=50V ID=9.0A RG=12 RD=5.5 VGS=0V VDS=25V f=1.0MHz ID=-8.4A VDS=-80v VGS=-10V VDD=-50V ID=-8.4A 1 1 1 RG=9.1 RD=6.2 VGS=0V VDS=-25V f=1.0MHz IS=9.0A VGS=0V (Q2,Q3) IS=-8.4A VGS=0V (Q1,Q4) 1 1 IS... |
Description |
H-BRIDGE MOSFET POWER MODULE
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File Size |
224.46K /
5 Page |
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MSK[M.S. Kennedy Corporation]
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Part No. |
MSK3020
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OCR Text |
...= -8.4A (Q1, Q4) ID = 14A VDS = 80v VGS = 10V VDD = 50V ID = 14A RG = 12W RD = 3.5W VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = 14A ID = -8.4A VDS = -80v VGS = -10V VDD = -50V ID = -8.4A RG = 9.1W RD = 6.2W VGS = 0V VDS = -25V f = 1 MHz IS ... |
Description |
H-BRIDGE MOSFET POWER MODULE
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File Size |
236.25K /
6 Page |
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NTE[NTE Electronics]
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Part No. |
NTE2086 NTE2085
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OCR Text |
... to 480 watts (1.5A per output, 80v, 26% duty cycle). The NTE2085 is a quad driver intended for use with TTL, low-speed TTL, and 5V MOS logic. The NTE2086 is similar to the NTE2085 except that it is designed for use with PMOS and 12V CMOS l... |
Description |
Integrated Circuit 4-Stage Darlington Array
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File Size |
21.24K /
3 Page |
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NTE Electronics, Inc. NTE[NTE Electronics]
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Part No. |
NTE2088
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OCR Text |
... to 480 Watts (1.5A per output, 80v, 26% duty cycle). This device has a minimum output breakdown of 50V and a minimum VCE(sus) of 35V measured at 100mA, or a minimum output breakdown of 80v and a minimum VCE(sus) of 50V. A copper-alloy lead... |
Description |
Dual Differential Comparator, Enhanced Voltage 8-TSSOP -40 to 125 Integrated Circuit 4-Segment Darlington Array, w/Pre-Driver Stage for use with PMOS and 12V CMOS
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File Size |
21.77K /
3 Page |
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NTE[NTE Electronics]
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Part No. |
NTE2375
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OCR Text |
...te 4 VDS = 100V, VGS = 0V VDS = 80v, VGS = 0V, TJ = +150C VGS = 20V VGS = -20V ID = 41A, VDS = 80v, VGS = 10V, Note 4
Gate-to-Source Forw...1 TJ = +25C, IS = 41A, VGS = 0V, Note 4 TJ = +25C, IF = 41A, di/dt = 100A/s, Note 4 Test Conditions ... |
Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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File Size |
28.59K /
3 Page |
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it Online |
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Price and Availability
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