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PERKINELMER[PerkinElmer Optoelectronics]
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| Part No. |
VTT1214 VTT1212
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| OCR Text |
5 mm) Plastic Package
VTT1212, 1214
PACKAGE DIMENSIONS inch (mm)
CASE 26 T-1 3/4 (5 mm) CHIP TYPE: 40T
PRODUCT DESCRIPTION
A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mou... |
| Description |
.040 NPN Phototransistors
.040 NPN Phototransistors
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| File Size |
19.27K /
1 Page |
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hitachi
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| Part No. |
2SD1306
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| OCR Text |
...EBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 -55 to +150 Unit V V V A mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 --
1
Typ -- -- -- -- -- -- -- 250
Max -- -- ... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
15.50K /
4 Page |
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Vishay Intertechnology
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| Part No. |
VTS40100CT
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| OCR Text |
...
Ultra Low VF = 0.375 V at IF = 5 A Major Ratings and Characteristics
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 250 A
TO-220AB
3 2 1
0.61 V 150 C
PIN 1 PIN 3
PIN 2 CASE
Features
* * * * * Trench MOS Schottky ... |
| Description |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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| File Size |
285.92K /
4 Page |
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hitachi
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| Part No. |
2SD1606
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| OCR Text |
....0 2.0 Max -- -- 100 10 20000 1.5 3.0 2.0 3.5 3.0 -- -- -- V V V V V s s s Unit V V A A Test conditions I C = 25 mA, RBE = I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, ... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
33.87K /
5 Page |
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it Online |
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Vishay
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| Part No. |
VP2020L 70210
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| OCR Text |
...
rDS(on) Max (W)
20 @ VGS = -4.5 V 20 @ VGS = -10 V
VGS(th) (V)
-0.8 to -2.5 -0.8 to -2.8
ID (A)
-0.12 -0.15
FEATURES
D D D D D High-Side Switching Secondary Breakdown Free: -220 V Low On-Resistance: 11.5 W Low-Power/Voltage Dr... |
| Description |
P-Channel Enhancement-Mode MOSFET Transistors
From old datasheet system
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| File Size |
72.78K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SD1826 2SB1224
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| OCR Text |
... 5000 20 0.9 (-1.0) (-)2.0 (-)1.5 MHz V V V Conditions Ratings min typ max (-)0.1 (-)3.0 Unit mA mA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely h... |
| Description |
PNP Epitaxial Planar Silicon Darlington Transistors Driver Applications
PNP/NPN Epitaxial Planar Silicon Darlington Transistor
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| File Size |
151.09K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SD1838
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| OCR Text |
...mm 2041A
[2SD1838]
10.0 3.2 4.5 2.8
Features
* High DC current gain. * Large current capacity * Wide ASO. * On-chip Zener diode of 6010V between collector and base. * Uniformity in collector-to-base breakdown voltage due to adoption o... |
| Description |
NPN Triple Diffused Planar Silicon Darlington Transistor
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| File Size |
86.84K /
4 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1985 2SD1985A
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| OCR Text |
...es
0.70.1
Unit: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
q q q
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1985 2SD1985A 2SD1985 S... |
| Description |
Silicon NPN triple diffusion planar type(For power amplification)
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| File Size |
45.61K /
2 Page |
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hitachi
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| Part No. |
2SD2019
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| OCR Text |
... ID*
1 1
Ratings 150 80 8 1.5 3 10 150 -55 to +150 1.5
Unit V V V A A W C C A
2SD2019
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 150 80 7 -- -- 2000 5000 1000 -- -- -- Typ ... |
| Description |
Silicon NPN Triple Diffused
From old datasheet system
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| File Size |
32.74K /
5 Page |
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it Online |
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Price and Availability
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