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  4.3w Datasheet PDF File

For 4.3w Found Datasheets File :: 3384    Search Time::1.594ms    
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    2N2904

STMicroelectronics N.V.
SEME-LAB[Seme LAB]
Part No. 2N2904
OCR Text 4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) GENERAL PURPOSE PNP TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 ...3W 17.2mW / C -65 to +200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-...
Description High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速,饱和硅晶体管开关进步党(高速,饱和开关型进步党硅晶体管)
GENERAL PURPOSE PNP TRANSISTOR

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    2SC3980 2SC3980A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3980 2SC3980A
OCR Text ...tings 900 1000 900 1000 800 7 6 4 2 70 3 150 -55 to +150 Unit V 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00...3W) IB=1000mA 2SC3980, 2SC3980A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) ...
Description DIODE SWITCHING DUAL SERIES 50V 300mA-Io 350mW 4ns-trr SOT-23 3K/REEL
Silicon NPN triple diffusion planar type

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    2SC3981 2SC3981A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC3981 2SC3981A
OCR Text ...80 8 IB=1A 0.8A 6 0.5A 4 0.4A 0.3A 0.2A 2 0.1A 40 20 (2) (3) 25C 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 1...3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal...
Description TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC3982 2SC3982A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC3982 2SC3982A
OCR Text ...6.00.5 10.0 1.5 2.0 4.0 1.5 20.00.5 2.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage C...3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5551

SANYO[Sanyo Semicon Device]
Part No. 2SC5551
OCR Text ...ions unit:mm 2038A [2SC5551] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-B...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

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    2SD1894

PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1894
OCR Text ... 3 TC=-25C 1 25C 0.3 100C 4 (2) 2 (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1mA 0.1 0.1 0.3 1 3 10 ...3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD1894...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

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    BCR3AM-12 BCR3AM-8 BCR3AM

Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Powerex Power Semicondu...
Part No. BCR3AM-12 BCR3AM-8 BCR3AM
OCR Text ....5 12.0 Min. 10.0 Max. 8.0 Max. 4.5 4.0 Max. 3.2 0.2 Dimensions H J K L M N P Inches Millimeters 0.126 0.004 Dia. 3.2 0.1 Dia. 0.10 0.061...3W 2.2 VGT PG(avg) = 0.3W IGM = 0.5A 100 100 1.4 IRGT I, IFGT I, IRGT III 0....
Description Triac 3 Amperes/400-600 Volts 600 V, 3 A, TRIAC, TO-202

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    BCR3AM

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR3AM
OCR Text ...R3AM OUTLINE DRAWING 10 MAX 4 3.20.1 TYPE NAME VOLTAGE CLASS Dimensions in mm 0.5 4 MAX 12 MIN 1.20.1 0.8 0.8 8 MAX ...3W IGM = 0.5A GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 PG...
Description LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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    BCR5AS-12 BCR5AS-12L BCR5AS-8L BCR5AS

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. BCR5AS-12 BCR5AS-12L BCR5AS-8L BCR5AS
OCR Text ...L M N Inches 0.040 Min. 0.040 0.4 Max. 0.03 0.020 0.01 0.020 Millimeters 1.0 Min. 1.0 0.9 Max. 0.8 0.5 0.2 0.5 0.1 Type BCR5AS VDRM...3W PGM = 3W 3.0 2.4 2.2 1.6 VGT = 1.5V 100 1.4 0.8 IRGT I, IFGT I, IRGT I...
Description Surface Mount Triac 5 Amperes/400-600 Volts 600 V, 5 A, TRIAC

File Size 79.48K  /  6 Page

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