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H&M Semiconductor
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| Part No. |
HM20N60A
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| OCR Text |
... i ar a1 avalanche current 4.5 a dv/dt a3 peak diode recovery dv/dt 5.0 v/ns power dissipation 250 w p d derating factor ab...300v r g = 25 ? -- 73 ns q g total gate charge -- 61 q gs gate to source charge --... |
| Description |
silicon N-channel Enhanced VDMOSFET
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| File Size |
521.58K /
10 Page |
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SamHop Microelectronics...
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| Part No. |
SDUD04N60
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| OCR Text |
... to 175 i d units parameter 600 4 11.8 v v 30 t c =25 c gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unl...300v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =300v,i d =... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
154.66K /
11 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
SDUD02N60
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| OCR Text |
4.7 @ vgs=10v www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. symbol v ds v gs i dm w a p d c -55 to 150 i ...300v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =300v,i d =... |
| Description |
Super high dense cell design for low RDS(ON).
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| File Size |
154.28K /
11 Page |
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it Online |
Download Datasheet |
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Isahaya Electronics Cor...
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| Part No. |
M57147AU-01
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| OCR Text |
...5 0.1 2.54 17=43 33 max 1.6 4.5 1.5 (3.41) control circuit vo1+ vo2+ vo3+ vo4+ 18 vo6+ vo5+ vin+ vin ? 17 16 12 11 10 vo5,6 vo4 ? vo3 ...300v v o2 voltage change io2 = 5 ~ 50ma, io1 = io3 = 50ma, io4 = 150ma, io5 = 400ma, io6 = 300ma, v ... |
| Description |
IPM POWER SUPPLY UNIT
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| File Size |
171.44K /
6 Page |
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it Online |
Download Datasheet |
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