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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5012 APT5012WVR
OCR Text	...6 MIN TYP MAX UNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Gate-Drain...400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 ...
Description	POWER MOS V 500V 40A 0.120 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.40K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5014B2VR
OCR Text	...re. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.34mH, R = 25, Peak I = 37...400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0....
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 37A 0.140 Ohm
File Size	61.78K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	...re. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.05...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	...re. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and informati...400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0....
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014 APT5014BLL APT5014SLL
OCR Text	...re. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.05...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024BFLL APT5024SFLL APT10078BFLL APT10078SFLL
OCR Text	...re. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.05...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5040CNR
OCR Text	...ig.1) Pulse Test: Pulse width < 380 S, Duty Cycle < 2% Starting Tj = +25C, L = 9.47mH, RG = 25, Peak IL = 13A APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 , THERMAL IMPEDANCE (C...
Description	POWER MOS IV 500V 13.0A 0.400 Ohm N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	52.43K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...re. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77...400 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...e. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77...400 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 10S 100S C, CAPACITANCE (pF) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M60JN
OCR Text	....1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.2 , THERMAL IMPEDANCE (C/W) 0.1 0.05 D=0.5 0.2 0.1 0....400 TJ =+150C 100 50 TJ =+25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 VDS=100V VDS=250V 16 ...
Description	POWER MOS IV 500V 71A 0.060 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.22K / 4 Page	View it Online	Download Datasheet

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