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F9530 DS1245 744223 TLP37107 LTI210TD K4B1G08 APM2506N 2V361
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  34.9a Datasheet PDF File

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    AP09N70R-A-HF AP09N70R-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N70R-A-HF AP09N70R-A-HF-14
OCR Text ...0v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss output capacitance v ds =25v - 170 - pf c rss...9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by max. junction temperature 2.starting t j =25 ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.45K  /  4 Page

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    ST Microelectronics
Part No. STW9NA60
OCR Text ... 14.2 14.8 0.559 0.413 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 dia 3.55 3.65 0.140 0.144 p025p to-247 mechanical data stw9na60-sth9na60fi 8/10 datasheet4u.com datasheet4u.com datasheet4u.com datasheet4u.com 4 .com u dat...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 324.48K  /  10 Page

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    AO4604

AOSMD[Alpha & Omega Semiconductors]
ETC
Part No. AO4604
OCR Text ... Current TJ=125C 1 20 22.5 31.3 34.5 15.4 0.76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.84 VGS=10V, VDS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s 4.1 20.6 5.2 16.5 7.8 28...
Description Complementary Enhancement Mode Field Effect Transistor 增强模式互补场效应晶体管

File Size 432.99K  /  9 Page

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    C5778

Sanyo Semicon Device
Part No. C5778
OCR Text ...24 it03526 6 4 14 12 10 8 12 56 34 78910 0 0 i c -- v be 0.2 0.4 0.6 0.8 1.0 1.4 1.2 8 6 16 14 12 10 4 2 1.0 h fe -- i c 23 57 2 2...9a, i b2 =--3.5a 3.0 m s fall time t f i c =7a, i b1 =0.9a, i b2 =--3.5a 0.2 m s diode forward volta...
Description Search --To 2SC5778

File Size 206.91K  /  4 Page

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    AP09N70R09 AP09N70R-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP09N70R09 AP09N70R-14
OCR Text ...0v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss output capacitance v ds =25v - 170 - pf c rss...9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by maximum junction temperature. 2.starting t j ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 94.10K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. PMV90EN
OCR Text ...- nc q gd gate-drain charge - 0.34 - nc c iss input capacitance v ds =15v; f=1mhz; v gs =0v; t j =25c - 132 - pf c oss output capacitance - 31 - pf c rss reverse transfer capacitance -13-pf t d(on) turn-on delay time v ds =15v; i d = 1.9 ...
Description 30 V, single N-channel Trench MOSFET High-speed line driver Switching circuits

File Size 458.22K  /  3 Page

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    Samwin
Part No. SW630
OCR Text ... - 140 q g total gatecharge - - 34 q gs gate-source charge - 4 - q gd gate-drain charge(miller charge) - 10 - nc v ds =160v,v gs =10v, i d =9a (note4,5) ns v dd =100v,i d =9a r g =50ohm (note4,5) pf v gs =0v,v ds =25v f=1mhz i gss unit s uc...
Description N-Channel MOSFET

File Size 686.90K  /  6 Page

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