| |
|
 |
SEME-LAB[Seme LAB]
|
| Part No. |
D2031UK
|
| OCR Text |
...POSE SILICON DMOS RF FET 7.5W - 28v - 1GHz SINGLE ENDED
0.360 0.005
6
1.27 6.50 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 0.15
7
1...6a 0.5 0.54 13 40 20:1 65
Typ.
Max. Unit
V 3 1 7 mA A V S dB % -- 36 18 1.5 pF pF pF
VGS(t... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28v-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28v-1GHz,单端)
METAL GATE RF SILICON FET
|
| File Size |
15.23K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| Part No. |
D2082UK D2082
|
| OCR Text |
28v - 1.0GHz
A K
B (2 pls) E
C 1
2
3
D 5 4
G (4 pls)
F
DIM A B C D E F G H I J K M N PIN 1 PIN 3
mm 6.45 1.65R 45 ...6a Thermal Resistance = 1.0 C / W
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device b... |
| Description |
TetraFET 40W - 28v - 1.0GHz
|
| File Size |
12.16K /
1 Page |
View
it Online |
Download Datasheet |
| |
|
|
TOTAL-POWER[Total Power International]
|
| Part No. |
DR-75-48 DR-75 DR-75-12 DR-75-24
|
| OCR Text |
...A 0 ~ 3.2A 76.8W 150mVp-p
24 ~ 28v
DR-75-48 48V 1.6a 0 ~ 1.6a 76.8W 240mVp-p
48 ~ 53V 1.0%
0.5%
1.0%
RIPPLE & NOISE (max.) Note.2 100mVp-p VOLTAGE ADJ. RANGE 12 ~ 14V VOLTAGE TOLERANCE Note.3 LINE REGULATION
2.0%
0.5%
1.0%
1... |
| Description |
75W Single Output Industrial DIN Rail Power Supply
|
| File Size |
289.13K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F1006
|
| OCR Text |
... VS POUT Idq=0.6a F=175 Mhz Vds=28v
200 180 160 140 120 100 80 60 Efficiency = 70 % 40 20 0 0 5 10 15
PIN IN WATTS
POUT GAIN
CAPACITANCE VS VOLTAGE
F1B 6 DICE CAPACITANCE
18
1000
16
14 POUT GAIN 12 100 10
Ciss Coss
8
... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
36.74K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F1015
|
| OCR Text |
...vs PIN Idq=1.6a FREQ=400Mhz Vds=28v
140 120 100 80 60 40 Efficiency = 55% 20 0 2 4 6 8
PIN IN WATTS
POUT PIN
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
13.5 13 12.5 12 11.5 11 10.5 10 100
1000
Coss
Ciss
Crss
10
12... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 专利金金属化硅栅增强型射频功率VDMOS晶体
|
| File Size |
37.15K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F1021
|
| OCR Text |
...PIN FREQ=400 MHZ; IDQ=1.6a; VDS=28v
160 140 GAIN 120 100 80 60 40 Efficiency = 55% 20 0 0 2 4 6 8 10
PIN IN WATTS
POUT GAIN
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
16 15 14 13
1000
POUT
12 100 11 10 9 8 12 14 16 18 20 1... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 专利金金属化硅栅增强型射频功率VDMOS晶体
|
| File Size |
37.25K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F1070
|
| OCR Text |
...s PIN
F=175 MHZ; IDQ=1.6a; VDS=28v 250 17
1000
CAPACITANCE VS VOLTAGE
F1B 4DIE CAPACITANCE
200 POUT IN WATTS
GAIN POUT
16
Gain in dB
150
15
Coss
100
Ciss
100
14
50
Efficiency = 66.67%
13
Crss... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
37.31K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F2013
|
| OCR Text |
...s Pin F=1000 Mhz; Idq=1.6a; Vds=28v
35 30 25 10 20 Pout 15 8 10 Efficiency = 35% 5 0 0 1 2 3 4
Pin in Watts
POUT PIN
CAPACITANCE VS VOLTAGE
F2A 4 DIE CAPACITANCE
12
100
Gain
11
Ciss Coss
9 10
Crss
7
6 5 6 7 8... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
37.28K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F2021
|
| OCR Text |
...REQ = 1000 MHZ, IDQ = 0.6a; VDS=28v
CAPACITANCE VS VOLTAGE
F2A 3 DIE CAPACITANCE VS VDS
14
11.5 11 10.5
100
12
10 10 GAIN 8 POUT 9.5 10 6 9 8.5 4 Efficiency = 35% 2 8 7.5 7 0 0.5 1
PIN IN WATTS
Ciss Coss
Crss
0 ... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
36.69K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
POLYFET[Polyfet RF Devices]
|
| Part No. |
F2049
|
| OCR Text |
...S PIN F=1000 MHZ; IDQ=0.6a; VDS=28v
F2A 3 DIE CAPACITANCE VS VDS
CAPACITANCE VS VOLTAGE
15 13
12.00
100
11.00 11 9 7 5 Efficiency = 35% 3 1 0 0.5 1
PIN IN WATTS
Ciss Coss
10.00
10
9.00
Crss
8.00
7.00 1.5 2
P... |
| Description |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
| File Size |
34.76K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
