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  20-vd-s Datasheet PDF File

For 20-vd-s Found Datasheets File :: 15669    Search Time::1.859ms    
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    UPD16835

NEC[NEC]
Part No. UPD16835
OCR Text ... V V mA A A A k kHz 400 20 430 mV mV AC Characteristics (Unless otherwise specified, VDD = 3.3 V, VM = 6.0 V, TA = 25C, fCL...VD sync circuit 3. FB pin is monitored. 4. FIL pin is monitored. A voltage about twice that of the E...
Description MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT

File Size 188.81K  /  32 Page

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    UPD16879 UPD16879GS-BGG

NEC[NEC]
Part No. UPD16879 UPD16879GS-BGG
OCR Text ...ltage VEVRSTEP tONH tOFFH 20 2.0 2.0 mV H bridge turn on time Note 5 s s H bridge turn off time Note 5 Notes 1. W...VD sync circuit 3. FB pin is monitored. 4. FIL pin is monitored. A voltage about twice that of the E...
Description MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT

File Size 191.03K  /  32 Page

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    5SHX08F4510

ABB, Ltd.
The ABB Group
Part No. 5SHX08F4510
OCR Text ... energized min typ max 20 Unit mA Mechanical data (see Fig. 20, 21) Maximum rated values Note 1 Parameter Mounting force ...VD = VR = 0 V tp = 10 ms, Tj = 115 C, sine wave after surge: VD = VR = 0 V min typ max 250 ...
Description Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR

File Size 297.60K  /  13 Page

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    5SHX03D6004

The ABB Group
Part No. 5SHX03D6004
OCR Text ...or 100 FIT failure rate 5500 V 20 mA 3300 V VGR 2V VD = VDRM VGR 2V 0 Tj 115 C. Ambient cosmic radiation at sea level in open air. Mechanical data Fm Dp H m Ds Da l h w (see Fig. 9) min. max. 10 kN 14 kN 34 mm 26 mm 0.55 kg 33...
Description Reverse Conducting Integrated Gate-Commutated Thyristor

File Size 206.10K  /  9 Page

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    5SGF30J4502

The ABB Group
Part No. 5SGF30J4502
OCR Text ...everse current 1.2 V 2.5 A 17 V 20 mA VGR = VGRM VD RA = 24 V = 0.1 Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state current td tr ton(min) Eon Delay time Rise time Min. on-time Turn-on energy per pulse 500 A/s 1000 ...
Description Gate turn-off Thyristor

File Size 300.37K  /  9 Page

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    X00602MN5BA4 X006 X00602MA5AL2 X00602MA2AL2 X00602MA1AA2

STMicroelectronics
Part No. X00602MN5BA4 X006 X00602MA5AL2 X00602MA2AL2 X00602MA1AA2
OCR Text ...10 ms tp = 10 ms F = 60 Hz tp = 20 s Tl = 85 C Ttab = 100 C Tl = 85 C Ttab = 100 C 10 Tj = 25 C Tj = 25 C Tj = 125 C Tj = 125 C Tj = 125 C A...VD = 12 V, RL = 140 MAX. MAX. VD = VDRM, RL = 3.3 k , RGK = 1 k IRG = 10 A IT = 50 mA, RGK = 1 k IG...
Description    0.8 A sensitive gate SCRs

File Size 87.28K  /  9 Page

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    TT570N TT570N-A

eupec GmbH
Part No. TT570N TT570N-A
OCR Text ...iGM = 1 A, diG/dt = 1 A/s, tg = 20 s Tvj = Tvj max vD = VDRM, vR = VRRM DIN IEC 747-6 Tvj = 25 C,iGM = 1 A, diG/dt = 1 A/s iD, iR tgd prepared by: C.Drilling approved by: J. Novotny date of publication: revision: 19.12.02 1 BIP ...
Description Phase Control Thyristor Module

File Size 407.47K  /  13 Page

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    INA-02100

http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. INA-02100
OCR Text ...g S22 Ang k 0.01 0.05 0.10 0.20 0.30 0.40 0.50 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.50 3.00 0.06 0.05 0.03 0.02 0.01 0.02 0.03 0....Vd (V) 6 8 15 20 30 Id (mA) 40 50 Figure 1. Typical Gain and Noise Figure vs. Frequen...
Description Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier
Low Noise Cascadable Silicon Bipolar MMIC Amplifier

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    STV270N4F3

STMicroelectronics
Part No. STV270N4F3
OCR Text ... 25 C Derating factor Value 40 20 270 220 1080 300 2 1000 -55 to 175 Operating junction temperature Unit V V A A A W W/C mJ C EAS (3) Ts...VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 ...
Description N-channel 40 V, 1.25 mΩ, 270 A, PowerSO-10 STripFET Power MOSFET
N-channel 40 V, 1.25 mヘ, 270 A, PowerSO-10 STripFET⑩ Power MOSFET

File Size 747.95K  /  12 Page

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