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  20 10 6 Datasheet PDF File

For 20 10 6 Found Datasheets File :: 466036    Search Time::7.468ms    
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    FS20KM-6

Mitsubishi Electric Semiconductor
Part No. FS20KM-6
OCR Text ... Conditions Ratings 300 30 20 60 40 -55 ~ +150 -55 ~ +150 Unit V V A A W C C Vrms g Feb.1999 AC for 1minute, Terminal to case Ty...10 1 4 0.26 2.6 -- -- -- -- -- -- -- -- 2.0 3.13 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W ...
Description HIGH-SPEED SWITCHING USE

File Size 43.87K  /  4 Page

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    FS16UM-6

Powerex, Inc.
Powerex Power Semiconductors
Mitsubishi Electric Corporation
Part No. FS16UM-6
OCR Text ... -- 3 0.25 2.0 10.0 1050 220 45 20 40 110 50 1.5 -- Max. -- -- 10 1 4 0.33 2.64 -- -- -- -- -- -- -- -- 2.0 1.00 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source ...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 16 A, 300 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 47.46K  /  4 Page

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    0-1393280-6 2-1414987-3 6-1414920-0 8-1416000-7 V23086 6-1414918-8

Tyco Electronics
Part No. 0-1393280-6 2-1414987-3 6-1414920-0 8-1416000-7 V23086 6-1414918-8
OCR Text .../25a 30/25a 30a 85c 20/15a 20/15a 20a limiting making current 40a 1) 40a 1) 100a 2) limiting breaking current ...10. 2) corresponds to the peak inrush current on initial actuation (cold flament). 3) see chapte...
Description Micro Relay K (THT ?THR)
Micro Relay K (THT - THR)

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    UT139GP-6-TA3-T

Unisonic Technologies
Part No. UT139GP-6-TA3-T
OCR Text ...w average gate power (over any 20 ms period) p g ( av ) 0.5 w junction temperature t j 125 c storage temperature t stg -40 ~ +150...10 60 90 holding current i h v d =12v, i gt =0.1a 6 30 60 ma on-state voltage v t i t =20a 1...
Description TRIAC

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    Bourns, Inc.
Part No. CDNBS16-PLC05-6
OCR Text ... unit peak pulse power (t p = 8/20 s) p pk 3600 w peak pulse power (t p = 10/1000 s) note 1 p pk 600 w storage temperature t stg -55 ?c to 150 ?c ?c operating temperature t opr -55 ?c to 150 ?c ?c parameter symbol value unit minimum breakd...
Description TVS Diode Array 600 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

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    UT138FGP-6-TF3-R

Unisonic Technologies
Part No. UT138FGP-6-TF3-R
OCR Text ... reapplied v drm ( ma x ) t =20 ms i tsm 90 a t =16.7 ms 100 i 2 t for fusing (t =10 ms) i 2 t 40 a 2 s repetitive rate of rise of on-state current after triggering i tm =12 a, i g =0.2 a, di g /dt=0.2a/s t2 + g+ di t /d...
Description TRIAC

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    MIMIX[Mimix Broadband]
Part No. DR-6 DR-11
OCR Text ...6525 - 15W Min 5.9 45.0 +41.0 -20 0.0 0.0 0.0 -21.0 Typ -14.0 50 50.0 +/-0.5 8.0 -12.0 +42.0 52.0 8.5 Max 6.4 -9.5 +/-1.0 10.0 +5.0 48.0 70.0 60.0 +70 95 16,000 60,000 -56.0 9.0 1005392 - 25W Min 5.9 45.0 +43.0 -20 0.0 0.0 0.0 -21.0 Ty...
Description SSPA Replacement Kits

File Size 188.18K  /  1 Page

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    FS10KM-6 MITSUBISHIELECTRICCORPORATION-FS10KM-6

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS10KM-6 MITSUBISHIELECTRICCORPORATION-FS10KM-6
OCR Text ...-- -- -- 3 0.52 2.6 6.0 570 110 20 17 25 60 30 1.5 -- Max. -- -- 10 1 4 0.68 3.4 -- -- -- -- -- -- -- -- 2.0 3.57 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source...
Description HIGH-SPEED SWITCHING USE

File Size 44.27K  /  4 Page

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    ??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. DTC123EL-AN3-6-R DTC123E DTC123E-AE3-6-R DTC123E-AL3-6-R DTC123E-AN3-6-R DTC123EL-AE3-6-R DTC123EL-AL3-6-R
OCR Text ... MAX 0.5 UNIT V V mA A K MHz 20 1.54 0.8 VCE =10V, IE =-5mA, f=100MHz * 2.2 1 250 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.c...10 5 2 1 500m 200m 100m 100 2005001m Ta=-40 25 100 500 200 100 50 20 10 5 2 1 Ta=100 25 -40 ...
Description DIGITAL TRANSISTORS (BUILT- IN RESISTORS) 数字晶体管(内置电阻,)

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