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IRF[International Rectifier]
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| Part No. |
IRFB4215PBF
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| OCR Text |
...anche Energy
Min. 60 --- --- 2.0 61 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VG...64A 39 nC VDS = 48V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 64A ns --- RG = 6.2 --- V... |
| Description |
HEXFET Power MOSFET
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| File Size |
136.42K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFB4215
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| OCR Text |
...anche Energy
Min. 60 --- --- 2.0 61 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VG...64A 39 nC VDS = 48V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 64A ns --- RG = 6.2 --- V... |
| Description |
HEXFET Power MOSFET
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| File Size |
194.84K /
8 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRFN054
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| OCR Text |
...ht
IRFN054
55* 40 256 150 1.2 20 480 55 15 4.5 -55 to 150 300 (for 5 seconds) 2.6 (typical)
Units A
W W/K V mJ A mJ V/ns
oC
g
...64A
Fig. 3 -- Typical Transfer Characteristics
Fig. 4 -- Normalized On-Resistance Vs.Temperatu... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
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| File Size |
180.33K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRFZ48NSPBF IRFZ48NLPBF
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| OCR Text |
...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile...64A
I D , Drain-to-Source Current (A)
2.0
100
1.5
1.0
10
0.5
1
V DS = 25V... |
| Description |
HEXFET Power MOSFET
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| File Size |
291.52K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFZ48N IRFZ48NPBF
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| OCR Text |
...anche Energy
Min. 55 --- --- 2.0 24 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Max. Units Conditions --- V VG...64A
TJ = 25 C TJ = 175 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drai... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
100.17K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRL3103SPBF IRL3103LPBF
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| OCR Text |
...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL3103L) is available for lowprofile...64A
D2Pak IRL3103S
TO-262 IRL3103L
Parameter
Continuous Drain Current, VGS @ 10V Continuou... |
| Description |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
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| File Size |
642.43K /
10 Page |
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it Online |
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IRF[International Rectifier]
http://
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| Part No. |
IRL3502_03 IRL3502 IRL3502PBF IRL350203
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| OCR Text |
... Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
Starting TJ = 25C, L = 190H
RG = 25, IAS = 64A.
ISD 64A, di/dt 86A/s, VDD V(BR)DSS,
TJ 150C
junction temperature; for recommended... |
| Description |
HEXFET Power MOSFET
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| File Size |
170.19K /
7 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGH32N60BU1
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| OCR Text |
2.3 V = 80 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; ...64A
VCE (sat) - Normalized
80
1.50
IC - Amperes
60 40 20 0
1.25
IC = 32A
1.00
... |
| Description |
HiPerFAST IGBT with Diode
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| File Size |
136.66K /
6 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGR32N60CD1
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| OCR Text |
...T) tfi(typ)
= 600 V = 45 A = 2.7 V = 55 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tst...64A
IC - Amperes
60 40 20
5V 7V
1.00
IC = 32A IC = 16A
0.75
0
0
1
2
3... |
| Description |
HiPerFAST IGBT with Diode ISOPLUS247
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| File Size |
567.82K /
5 Page |
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it Online |
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Price and Availability
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