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				Intel
Part No.	RD38F2030
OCR Text	...it; Async SRAM Density: 4-, 8-, 16mbit -- Top, Bottom or Dual flash parameter configuration Device Voltage -- Flash VCC = 1.8 V; Flash VCCQ = 1.8 V or 3.0 V -- RAM VCC = 3.0 V; RAM VCCQ = 1.8 V or 3.0 V Device Packaging -- 88 balls (8 x 10 ...
Description	(RD38F2xxx) FLASH+PSRAM
File Size	439.18K / 54 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4T1G164QD K4T1G084QD
OCR Text	...Gb DDR2 SDRAM is organized as a 16mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip i...
Description	1Gb D-die DDR2 SDRAM Specification
File Size	574.74K / 27 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4T1G164QQ K4T1G164QQ-HCLE6 K4T1G164QQ-HCLE7 K4T1G164QQ-HCLF7 K4T1G084QQ K4T1G084QQ-HCLE6 K4T1G084QQ-HCLE7 K4T1G084QQ-HCLF7 K4T1G044QQ K4T1G044QQ-HCLE6 K4T1G044QQ-HCLE7 K4T1G044QQ-HCLF7
OCR Text	... as a 32Mbit x 4 I/Os x 8banks, 16mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is...
Description	1Gb Q-die DDR2 SDRAM Specification
File Size	872.94K / 44 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4T51163QE K4T51083QE
OCR Text	...as a 32Mbit x 4 I/Os x 4 banks, 16mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is...
Description	512Mb E-die DDR2 SDRAM Specification
File Size	929.03K / 45 Page	View it Online	Download Datasheet

				http:// MOSAIC
Part No.	SYS82000RKXC-85 SYS82000RKXC-70 SYS82000RKXC-10 SYS82000RKXC-12 SYS82000RKXCLI-10 SYS82000RKXCLI-12 SYS82000RKXCLI-85 SYS82000RKXCI-10 SYS82000RKXCI-12 SYS82000RKXCI-85 SYS82000RKXCL-10 SYS82000RKXCL-12 SYS82000RKXCL-85
OCR Text	16mbit Static RAM Module housed in a standard 38 pin Single InLine package organised as 2M x 8 with access times of 85,100, or 120 ns. The module is constructed using four 512Kx8 SRAMs in TSOPII packages mounted onto an FR4 epoxy substrate....
Description	2M x 8 SRAM MODULE
File Size	90.59K / 7 Page	View it Online	Download Datasheet

				MOSAIC
Part No.	SYS82000RKXDLI-10 SYS82000RKXDLI-12 SYS82000RKXDLI-85 SYS82000RKXD-85 SYS82000RKXD-10 SYS82000RKXD-12 SYS82000RKXDL-10 SYS82000RKXDL-12 SYS82000RKXDL-85 SYS82000RKXDI-10 SYS82000RKXDI-12 SYS82000RKXDI-85
OCR Text	16mbit Static RAM Module housed in a standard 36 pin Single-InLine package organised as 2M x 8. This offers an extremely high PCB packing density. The module is constructed using four 512Kx8 SRAMs in TSOPII packages mounted on a FR4 epoxy s...
Description	2M x 8 SRAM MODULE
File Size	91.16K / 7 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY64UD16162M-DF85E HY64UD16162M-DF85I HY64UD16162M-DF70E HY64UD16162M-DF70I HY64UD16162M HY64UD16162M-E HY64UD16162M-I
OCR Text	...CRIPTION The HY64UD16162M is a 16mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16162M adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The HY64UD16162M operates ...
Description	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
File Size	348.29K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K9F1208R0C
OCR Text	...9F1208X0C is 512Mbit with spare 16mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typi...
Description	64M x 8 Bits NAND Flash Memory
File Size	813.93K / 38 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I HY64UD16162B-DF70E HY64UD16162B-DF70I HY64UD16162B-E HY64UD16162B-I
OCR Text	...CRIPTION The HY64UD16162B is a 16mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64UD16162B adopts one transistor memory cell and is organized as 1,048,576 words by 16bits. The HY64UD16162B operates ...
Description	1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
File Size	283.38K / 11 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYB39S512400AE-7.5 HYB39S512800AE-7.5 HYB39S512160AE-7.5 HYI39S512400AE-7.5 HYI39S512800AE-7.5 HYI39S512160AE-7.5
OCR Text	... 4 banks x 32MBit x4, 4 banks x 16mbit x8 and 4 banks x 8Mbit x16 respectively. These synchronous devices achieve high speed data transfer rates for CAS latencies by employing a chip architecture that prefetches multiple bits and then synch...
Description	512-Mbit Synchronous DRAM
File Size	702.97K / 21 Page	View it Online	Download Datasheet

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