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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
APTDF400AA60G
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OCR Text |
... 1.6 2.0 1.3 Max 2.0 Unit V 750 1000 760 A pF
Dynamic Characteristics
Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse Recove...4000A/s
Min
Typ 34 160 220 1.16 6.12 20 52 100 11.6 176
Max
Unit ns ns C A ns
C A
IF... |
Description |
Dual Common Anode diodes Power Module 500 A, 600 V, SILICON, RECTIFIER DIODE
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File Size |
211.29K /
4 Page |
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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Part No. |
APTGT450DA60G
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OCR Text |
...60G
Typical Performance Curve
1000 800
T J=125C
Output Characteristics (V GE=15V)
T J=25C
Output Characteristics 1000
TJ = 150C
800
VGE=19V
VGE=13V VGE =15V VGE =9V
IC (A)
400 200 0 0 0.5
T J=25C
IC (A)
600
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Description |
Boost chopper Trench Field Stop IGBT Power Module 550 A, 600 V, N-CHANNEL IGBT
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File Size |
240.21K /
5 Page |
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ABB, Ltd.
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Part No. |
5SHY35L4512
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OCR Text |
...nce r t t j = 125 c i t = 1000...4000 a 0.21 m w turn-on switching (see fig. 14, 15) maximum rated values 1) parameter symbol conditions min typ max unit critical rate of rise of on- state current di t /dt c... |
Description |
Asymmetric Integrated Gate- Commutated Thyristor 3300 A, 4500 V, ASSYMETRIC SCR
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File Size |
431.23K /
9 Page |
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it Online |
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