10 30v pdf Datasheet P15 Full Text Search --- IC-ON-LINE


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10 30v Datasheet PDF File

For 10 30v Found Datasheets File :: 31201 Search Time::2.188ms
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				Alpha & Omega Semiconductors
Part No.	AO4613 AO461310
OCR Text	... bv dss 30 v 1 t j =55c 5 i gss 10 m a v gs(th) 1 2 3 v i d(on) 20 a 20 24 t j =125c 29 35 30 40 m w g fs 10 18 s v sd 0.77 1 v i s 3 a c iss 522 630 pf c oss 110 pf c rss 75 pf r g 2.1 3 w q g (10v) 11 15 nc q g (4.5v) 5.3 7 nc q gs 1.9 nc...
Description	30v Dual P N-Channel MOSFET
File Size	215.01K / 7 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AO4613
OCR Text	... bv dss 30 v 1 t j =55c 5 i gss 10 m a v gs(th) 1 2 3 v i d(on) 20 a 20 24 t j =125c 29 35 30 40 m w g fs 10 18 s v sd 0.77 1 v i s 3 a c is...30v dual p + n-channel mosfet symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 10 m a v ...
Description	30v Dual P N-Channel MOSFET
File Size	573.09K / 7 Page	View it Online	Download Datasheet

				NJRC[New Japan Radio]
Part No.	NJM2742V NJM2742 NJM2742D NJM2742M NJM2742RB1
OCR Text	...55 70 +13.7 /-13.7 +13.5 /-13.5 10 10 -15 ( V+/V -=15V, Ta=25C) TYP MAX UNIT 4.3 1.0 80 5 110 75 90 +14 /-14.8 30 30 5.5 12 400 75 12.5 m...30v Vin=0V Operating Current [mA] Operating Current[mA] 4.0 4 3.0 3 2.0 2 ...
Description	HIGH SPEED SINGLE SUPPLY OPERATIONAL AMPLIFIER
File Size	288.61K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BYV25F-600 BYV25F-600-15
OCR Text	...ive peak forward current t p = 10 ms; sine-wave pulse; t j(init) = 25 c; see figure 3 -60a t p = 8.3 ms; sine-wave pulse; t j(init) = 25...30v; di f /dt = 100 a/s; t j =25c; see figure 6 -13-nc t rr reverse recovery time i f =1a; v r =30...
Description	Enhanced ultrafast power diode
File Size	157.81K / 11 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE1577
OCR Text	... VS = 8V to 30v Min - - - - Typ 10 10 1 60 Max - - - - Unit mA mA mA dB Electrical Characteristics (Cont'd): (TA = +25C, VS = 14.4V, GV = 60dB unless otherwise specified) Parameter Input Resistance Output Resistance (pins 1-15) Total Ha...
Description	Integrated Circuit Dual / Low Noise Preamp w/Auto Reverse Integrated Circuit Dual, Low Noise Preamp w/Auto Reverse
File Size	26.51K / 4 Page	View it Online	Download Datasheet

				NTE Electronics, Inc. NTE[NTE Electronics]
Part No.	NTE159M NTE123A
OCR Text	.... . . . . . . . . . . . . . . . 10.3mW/C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....30v, VBE = 500mV VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150C NTE159M VCB = 50V, IE = 0 VCB = 50V...
Description	Silicon Complementary Transistors General Purpose
File Size	32.28K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE16002
OCR Text	... - - - - - - - - - - - - - 0.25 10 5 1 0.25 V V mA mA mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH inductor. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Functi...
Description	Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz
File Size	23.18K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANSH2N7495U5 IRHE53034 IRHE54034 IRHE57034 IRHE58034 JANSF2N7495U5 JANSG2N7495U5 JANSR2N7495U5 IRHE57034-15
OCR Text	... -- -- -- 6.1 -- -- 0.08 4.0 -- 10 25 100 -100 45 15 20 25 100 35 30 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference...30v VDD = 30v, ID = 11.7A, VGS =12V, RG = 7.5 ns nH Measured from the center of drain pad t...
Description	11.7 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Simple Drive Requirements
File Size	122.71K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANSH2N7394U IRHN3054 IRHN4054 IRHN7054 IRHN8054 JANSF2N7394U JANSG2N7394U JANSR2N7394U IRHN8054PBF IRHN7054-15
OCR Text	... 305 345 70 60 50 VDS 40 30 20 10 0 0 -5 -10 VGS -15 -20 BR I Range VDS (V) (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V 39 60 60 45 40 32.8...30v 16 C, Capacitance (pF) 6000 Ciss 4000 12 Coss 2000 8 4 Crss 0 1 10...
Description	35 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Simple Drive Requirements
File Size	122.16K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4612 AO461210
OCR Text	...5 pf r g 1.65 2 w q g (10v) 8.5 10.5 nc q g (4.5v) 4.3 5.5 nc q gs 1.6 nc q gd 2.2 nc t d(on) 4.7 7 ns t r 2.3 4.5 ns gate resistance output...30v, r l =6.7 w , w gate source charge gate drain charge turn-on delaytime turn-on rise time v gs =0...
Description	60V Complementary Enhancement Mode Field Effect Transistor
File Size	474.43K / 9 Page	View it Online	Download Datasheet

For 10 30v Found Datasheets File :: 31201 Search Time::2.188ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |