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  1-10s Datasheet PDF File

For 1-10s Found Datasheets File :: 28010    Search Time::2.14ms    
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    AO3421E

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3421E
OCR Text ...r dissipation b p d t a =25c w 1.4 0.9 t a =70c junction and storage temperature range -55 to 150 rev 0: april 2012 www.aosmd....10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion ...
Description 30V P-Channel MOSFET

File Size 305.95K  /  5 Page

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    DMN4060SVT

Diodes Incorporated
Part No. DMN4060SVT
OCR Text 1 of 7 www.diodes.com february 2012 ? diodes incorporated dmn4060s v t advance information 45v n-channel enhanc ement mode mosfet ...10s t a = 25c t a = 70c i d 6.1 4.8 a continuous drain current (note 5) v gs = 5v steady...
Description 45V N-CHANNEL ENHANCEMENT MODE MOSFET

File Size 202.40K  /  7 Page

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    HATB1025R

Hitachi Semiconductor
Part No. HATB1025R
OCR Text ... 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1025R Absolute Maximum Ratings (Ta = 25C) Ite...10s, duty cycle 1 % 2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm),...
Description
File Size 55.44K  /  9 Page

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    IRF231 IRF232 IRF233 IRF230

http://
Intersil Corporation
Part No. IRF231 IRF232 IRF233 IRF230
OCR Text ...GE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handli...10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg CAUTION: ...
Description 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs

File Size 69.02K  /  7 Page

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    IRFD320 FN2325

INTERSIL[Intersil Corporation]
Part No. IRFD320 FN2325
OCR Text 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de...10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description 500 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
0.5A 400V 1.800 Ohm N-Channel Power MOSFET
0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
From old datasheet system
0.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET

File Size 49.85K  /  6 Page

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    hitachi
Part No. HAT2039R
OCR Text ...50 Unit V V A A A W W C C 1. PW 10s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s E...
Description GaAlAs Infrared Emitting Diode
From old datasheet system

File Size 106.52K  /  9 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...lity C G E P-TO-247-3-1 (TO-247AC) * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGW25N120...10s Tj , Tstg -55...+150 260 C 1) VCE 1200V IC 25A Eoff 2.9mJ Tj 150C Package TO-247...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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    hitachi
Part No. HAT1038RJ
OCR Text ...ature Storage temperature Note: 1. 2. 3. 4. Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Rating...10s, duty cycle 1 % 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW...
Description Silicon N Channel Power MOS FET High Speed Power Switching
From old datasheet system

File Size 122.47K  /  10 Page

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    AON2809

Alpha & Omega Semiconductors
Part No. AON2809
OCR Text ...< 90m w r ds(on) (at v gs =-1.8v) < 118m w typical esd protection hbm class 2 symbol the aon2809 combines advanced trench mosfet tech...10s steady-state c/w maximum junction-to-ambient a d 100 maximum junction-to-ambient a c/w r q ja ...
Description 12V Dual P-Channel MOSFET

File Size 246.79K  /  5 Page

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    AON2803

Alpha & Omega Semiconductors
Part No. AON2803
OCR Text ... 90m w r ds(on) (at v gs =-1.8v) < 115m w symbol the aon2803 uses advanced trench technology to provide excellent r ds(on) , low gate c...10s steady-state t 10s steady-state c/w maximum junction-to-ambient b 175 235 c/w maximum junct...
Description 20V Dual P-Channel MOSFET

File Size 253.26K  /  5 Page

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