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  0.976 Datasheet PDF File

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    STPS16045TV 3450

STMicroelectronics
Part No. STPS16045TV 3450
OCR Text ...e voltage Tc = 75C Per diode = 0.5 Per device tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square Parameter Repetitive peak re...976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1....
Description From old datasheet system
POWER SCHOTTKY RECTIFIER

File Size 48.82K  /  4 Page

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    STPS16045 STPS16045TV

STMicroelectronics
ST Microelectronics
Part No. STPS16045 STPS16045TV
OCR Text ... of reverse voltage Tc = 75C = 0.5 Per diode Per device Parameter Repetitive peak reverse voltage Value 45 125 80 160 900 2 5 - 55 to + 150...976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1....
Description 80 A, 45 V, SILICON, RECTIFIER DIODE
POWER SCHOTTKY RECTIFIER
POWER SCHOTTKY RECTIFIER

File Size 118.57K  /  4 Page

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    STMicro
Part No. STPS160H100TV 5384
OCR Text ...of reverse voltage Tc = 110C = 0.5 Per diode Per device Value 100 180 80 160 1000 2 10 - 55 to+ 150 150 10000 Unit V A A A A A C C V/s Pack...976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1....
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
From old datasheet system

File Size 48.04K  /  4 Page

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    STPS160H100 STPS160H100TV

STMicroelectronics N.V.
ST Microelectronics
Part No. STPS160H100 STPS160H100TV
OCR Text ...n n n n 2 x 80 A 100 V 150 C 0.68 V K1 A1 K2 A2 n n n n NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LE...976 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 Cooling method: C Recommended torque value: 1....
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 高压功率肖特基整流器

File Size 113.75K  /  5 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STTA2512 STTA2512P
OCR Text ...ower dissipation IF(AV) = 25A =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Conditions Per diode Total Coupling Tc= 70C Tc= 82C...976 typ. 8/9 STTA2512P / STTA5012TV1/2 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. A C D D1...
Description TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

File Size 82.18K  /  9 Page

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    2SD2651

Hitachi Semiconductor
Part No. 2SD2651
OCR Text ...80 -- Typ -- -- -- -- -- -- Max 0.1 0.1 10 0.75 160 0.5 Unit A A A V -- V Test Conditions VCB = 300V, IE = 0 VCB = 300V, RBE = VEB = 5 V, IC = 0 VCE = 6V, I C = 1mA VCE = 6V, IC = 2mA I C = 30mA, IB = 3mA Collector to emitter saturation...
Description Silicon NPN Transistor
Silicon NPN Epitaxial High Voltage Amplifier

File Size 29.67K  /  6 Page

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    2SK3001

Hitachi Semiconductor
Part No. 2SK3001
OCR Text ...w noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) * High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) * Small packag...976 0.965 0.956 0.949 0.942 0.930 0.918 0.903 0.895 0.882 0.869 0.856 0.843 0.826 0.814 0.800 0.785 ...
Description GaAs HEMT Low Noise Amplifier
Silicon NPN Triple Diffused
From old datasheet system

File Size 106.92K  /  14 Page

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    BIC801M

Hitachi Semiconductor
Part No. BIC801M
OCR Text ...stand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is "AY-". 2....976 0.974 0.971 0.969 0.966 0.962 0.958 0.954 0.951 0.946 0.942 0.938 0.933 0.929 0.924 0.919 ANG -2...
Description Bias Controlled Monolithic IC VHF/UHF RF Amplifier
From old datasheet system

File Size 77.51K  /  12 Page

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    MLN2030SS MLN2030SS07

Advanced Semiconductor
ASI
Part No. MLN2030SS MLN2030SS07
OCR Text ...s A linear Applications up to 2.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: * Class A Operation * PG = 10 dB at 1.0 W/2.0 GHz * Om...976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 1.000 / 25.4000 1.000 / 25.4000 .031 / 0.800...
Description NPN SILICON RF POWER TRANSISTOR

File Size 13.47K  /  1 Page

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