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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75FT3G
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| OCR Text |
...0 -40 -40 -40 2.5
Typ
Max 0.35 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature s... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
298.47K /
6 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75FTG
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| OCR Text |
... UT2 Q4
G3 S3
G2 S2 NT C1 0/VBUS NT C2
G4 S4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin sour... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
291.91K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75SCTG
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| OCR Text |
...nche energy rated *
G4 S4 NTC1 0/VBUS NTC2
MOSFET Power Module
VBUS CR1A CR3A
Q1
CR1B
CR3B
Q3
G1 S1 CR2A OUT1 OUT2 CR4A
G3 S3
Q2
CR2B
CR4B
Q4
G2 S2
Parallel SiC Schottky Diode - Zero reverse recovery... |
| Description |
Full bridge Series & SiC parallel diodes MOSFET Power Module
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| File Size |
305.67K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50HM75STG
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| OCR Text |
...R2B
CR4B
Q4
G2 S2 NTC1 0/V BUS NTC2
G4 S4
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low str... |
| Description |
Full bridge Series & parallel diodes MOSFET Power Module
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| File Size |
284.77K /
6 Page |
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it Online |
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IMP[IMP, Inc]
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| Part No. |
C3017
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| OCR Text |
...LeffN WN BVDSSN VTFP(N) Minimum 0.6 42 2.85 12 12 Typical 0.8 0.6 47 3.2 0.7 Maximum 1.0 52 3.55 Unit V V1/2 A/V2 m m V V Comments 100x4m 10...75m 1.5m 100x100m 5.0m 80.0 m
Special Feature of C3017 Process: P-well analog process with double... |
| Description |
10 Volt Analog Mixed Mode
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| File Size |
29.16K /
2 Page |
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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...
2.0MAX.
5.5
6.3 2.15 2.0 2.15
LAND PATTERNS (mm)
6.0MAX.
.6
( 4.1H - 100H )
CDRH5D28
6.0MAX.
DIMENSIONS (mm)
2....75m) 119.0m( 88m) 146.0m(108m) 182.5m(135m) 209.5m(155m) 229.5m(170m) 305.0m(226m) 351.0m(260m) 418.... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFS6N754
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| OCR Text |
...m at VGS = 4.5V, ID = 3.5A VF < 0.45V @ 2A VF < 0.28V @ 100mA Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility Low Gate Charge (Qg = 4nC... |
| Description |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM
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| File Size |
323.42K /
7 Page |
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it Online |
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Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FMA219
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| OCR Text |
0 - 11.0 GHz Operating Bandwidth 1.5 dB Noise Figure 21 dB Small-Signal Gain 12 dBm Output Power +3V Single Bias Supply DC De-coupled I...75m nominal gap on each side 250m Au ribbon recommended
Notes: * Recommended lead bond technique ... |
| Description |
X-BAND LNA MMIC
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| File Size |
325.92K /
5 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD1000V
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| OCR Text |
...-tone level) VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 2.4 mA IGS = 2.4 mA IGD = 2.4 mA See Note on following page
Min 30 14.5
Typ 31 16.0 20 50
Max
Units dBm
RF SPECIF... |
| Description |
1W POWER PHEMT
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| File Size |
194.57K /
3 Page |
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it Online |
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Price and Availability
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