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TIANBO GANGLIAN ELECTRONICS
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| Part No. |
TRA1
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| OCR Text |
...? ) nominalvoltage (vdc) 0.54w 0.72w max operate voltage vdc min releasevoltage vdc max applicablevoltage vdc 3 17 13 2.4 0.15 3.9 5 46 35 4 0.25 6.5 6 67 50 4.8 0.3 7.8 9 150 110 7.2 0.45 11.7 12 270 200 ... |
| Description |
Relays
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| File Size |
106.18K /
3 Page |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
LT4420C
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| OCR Text |
...50 ) t a =70 i d 10.8 7.0 a pulsed drain current i dm 50 a continuous source current (diode conduction) i s 2.7 1.36 a ...10a 17 s v sd diode forward voltage i s =2.3a, v gs =0v 0.76 1.1 v dynamic qg... |
| Description |
9.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
577.84K /
6 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FGA90N30
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| OCR Text |
... pulse width = 100usec , duty = 0. 2 * ic_pulse limited by max tj thermal characteristics g c e to-3p symbol description fga90n30 units v ce...10a case tem perature, t c ( o c) collector-emitter voltage, v ce [v] 4 8 12 16 20 0 1 2 3 4 ... |
| Description |
300V PDP IGBT
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| File Size |
945.25K /
10 Page |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
KDB2670 FDB2670 KDB2670FDB2670
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| OCR Text |
0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2...10a 98 130 v gs =10v,i d =10a,t j =125 205 285 on?state drain current i d(on) v gs =10v,v ds =10v 20... |
| Description |
N-Channel PowerTrench MOSFET
19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
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| File Size |
261.48K /
2 Page |
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SANYO SEMICONDUCTOR CO LTD
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| Part No. |
C3255-R
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| OCR Text |
... cbo v cb =(--)40v, i e =0a (--)0.1 ma emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)0.1 ma dc current gain h fe v ce =(--)2v, i c ...10a high-speed switching applications
2sa1291 / 2sc3255 no.1201-2/4 continued from preceding page.... |
| Description |
10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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| File Size |
33.95K /
4 Page |
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WESTCODE SEMICONDUCTORS LTD
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| Part No. |
N2418ZC320
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| OCR Text |
...petitive surge t p =10ms, v rm =0.6v rrm , (note 5) 30000 a i tsm2 peak non-repetitive surge t p =10ms, v rm 10v, (note 5) 36000 a i 2 ti 2...10a/s, i fg =2a, t r =0.5s, t j =25c s q rr recovered charge - 8300 - c q ra recovered charge, 50% c... |
| Description |
4757 A, 3200 V, SCR
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| File Size |
168.82K /
10 Page |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
V3040S3SL86Z
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| OCR Text |
... = 25c, i scis = 14.2a, l = 3.0 mhy 300 mj e scis150 at starting t j = 150c, i scis = 10.6a, l = 3.0 mhy 170 mj i c25 collector current ...10a, v ge = 4.5v t c = 150c, see fig. 4 - 1.58 1.80 v v ce(sat) collector to emitter saturation ... |
| Description |
21 A, 390 V, N-CHANNEL IGBT, TO-263AB
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| File Size |
120.21K /
8 Page |
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it Online |
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