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    AO4478L

Alpha & Omega Semiconductors
Part No. AO4478L
OCR Text ...rent C S Maximum 30 25 9.0 7.0 60 17 14 3.1 2.0 -55 to 150 Units V V TA=25C TA=70C ID IDM Iar Ear PD TJ, TSTG A Avalanche...00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) ...
Description N-Channel Enhancement Mode Field Effect Transistor

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    AOD496A

Alpha & Omega Semiconductors
Part No. AOD496A
OCR Text ...C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Maximum 30 20 57 40 100 11 9 20 20 50 25 2.3 1.5 -55 to 175 Units ...00001 Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Trans...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 194.33K  /  6 Page

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    AOT472

Alpha & Omega Semiconductors
Part No. AOT472
OCR Text ...aximum junction-to-ambient a d 0.36 65 2.6 power dissipation b p d w power dissipation a p dsm w t a =70c t a =25c 1.9 1.9 t c =25c t c =...00001 0.0001 0.001 time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c)...
Description 75V N-Channel MOSFET

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AOT472
OCR Text ...aximum junction-to-ambient a d 0.36 65 2.6 power dissipation b p d w power dissipation a p dsm w t a =70c t a =25c 1.9 1.9 t c =25c t c =...00001 0.0001 0.001 time in avalanche, t a (s) figure 9: single pulse avalanche capability (note c)...
Description 75V N-Channel MOSFET

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    MURF550PFG NRVUD550PFT4G

ON Semiconductor
Part No. MURF550PFG NRVUD550PFT4G
OCR Text ... molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: mur550apfg: 1.1 gram (approximately) murd550pfg, nrvud550pft4g: 0.4 gram (approximate...00001 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 10 r (t) , transient thermal resistance figure 9. ...
Description SWITCHMODE Power Rectifier
   SWITCHMODE Power Rectifier

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    AOL1448

Alpha & Omega Semiconductors
Part No. AOL1448
OCR Text ...C Repetitive avalanche energy L=0.1mH C TC=25 Power Dissipation B Power Dissipation A C Maximum 30 20 36 28 90 11 9 20 20 30 15 2 1.3 -5...00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized M...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 147.44K  /  6 Page

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    AO4452

Alpha & Omega Semiconductors
Part No. AO4452
OCR Text ...d repetitive avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum ...00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pul...
Description 100V N-Channel MOSFET

File Size 430.55K  /  6 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4452
OCR Text ...d repetitive avalanche energy l=0.1mh c pulsed drain current c continuous drain current t a =25c maximum junction-to-lead c/w c/w maximum ...00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 9: single pul...
Description 100V N-Channel MOSFET

File Size 384.67K  /  6 Page

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    AOT474 AOT474L

Alpha & Omega Semiconductors
Part No. AOT474 AOT474L
OCR Text ... Repetitive avalanche energy L=0.1mH Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A Junction and Storage Temperatu...00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) TA...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 290.45K  /  7 Page

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    AON7934

Alpha & Omega Semiconductors
Part No. AON7934
OCR Text ...erwise noted avalanche energy l=0.05mh c 3.0 mj 15 4.1 avalanche current c continuous drain current 9 i dsm units 25 36 36 a max q2 72 13 ...00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s...
Description 30V Dual Asymmetric N-Channel AlphaMOS

File Size 544.66K  /  10 Page

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