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  .5v Datasheet PDF File

For .5v Found Datasheets File :: 218262    Search Time::1.641ms    
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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...661A IC -- VCE Ta=25C 160 VCE=5V Ta=25C 140 IC -- I B Collector power dissipation PC (mW) Collector current IC (mA) 120 100 Collector current IC (mA) 400 IB=350A 300A 250A 120 100 80 60 40 20 0 300 80 60 40 2...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

File Size 50.15K  /  3 Page

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    ADT7476AARQZ-RL7

ON Semiconductor
Part No. ADT7476AARQZ-RL7
OCR Text ...information marking diagrams +2.5v in /therm pwm2/ smbalert pwm3/addren 1 2 3 4 5 6 7 8 20 21 22 23 24 19 18 17 14 13 12 11 scl gnd v cc vid2/gpio2 vid1/gpio1 vid0/gpio0 sda v ccp +12v in /vid5 d1+ vid4/gpio4 +5v in vid3/gpio3 tach3 tach2 t...
Description dBCOOL Remote Thermal Controller and Voltage Monitor

File Size 613.01K  /  67 Page

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    AP9987GH-HF14 AP9987GJ-HF14 AP9987GH-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP9987GH-HF14 AP9987GJ-HF14 AP9987GH-HF-14
OCR Text ...0v, i d =10a - - 90 m ? v gs =4.5v, i d =7a - - 105 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =10a - 15 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ...
Description Single Drive Requirement

File Size 94.17K  /  4 Page

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    AP9569GM14

Advanced Power Electronics Corp.
Part No. AP9569GM14
OCR Text ...0v, i d =-4a - - 90 m v gs =-4.5v, i d =-2a - - 130 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-4a - 5 - s i dss drain-source leakage current v ds =-40v, v gs =0v - ...
Description Simple Drive Requirement

File Size 56.18K  /  4 Page

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    AP9569GH-HF14 AP9569GJ-HF AP9569GJ-HF14

Advanced Power Electronics Corp.
Part No. AP9569GH-HF14 AP9569GJ-HF AP9569GJ-HF14
OCR Text ...v, i d =-10a - - 90 m v gs =-4.5v, i d =-6a - - 130 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-10a - 7 - s i dss drain-source leakage current v ds =-40v, v gs =0v -...
Description Simple Drive Requirement
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement, Fast Switching Characteristic

File Size 59.90K  /  4 Page

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