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Infineon Technologies A...
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Part No. |
IPAW60R360P7S
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OCR Text |
...02 0.360 - w v gs =10v, i d =2.7a, t j =25c v gs =10v, i d =2.7a, t j =150c gate resistance r g - 6.2 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input ca... |
Description |
600V CoolMOSa P7 Power Transistor
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File Size |
1,134.49K /
14 Page |
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Infineon Technologies A...
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Part No. |
IPD80R750P7
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OCR Text |
....66 0.75 - w v gs =10v, i d =2.7a, t j =25c v gs =10v, i d =2.7a, t j =150c gate resistance r g - 1 - w f =250khz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input ca... |
Description |
800V CoolMOSa P7 Power Transistor
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File Size |
1,130.95K /
13 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
IPD80R1K2P7
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OCR Text |
...gle pulse e as - - 10 mj i d =0.7a; v dd =50v avalanche energy, repetitive e ar - - 0.08 mj i d =0.7a; v dd =50v avalanche current, repetitive i ar - - 0.7 a - mosfet dv/dt ruggedness dv/dt - - 100 v/ns v ds =0to400v gate source voltage v... |
Description |
800V CoolMOSa P7 Power Transistor
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File Size |
1,170.53K /
13 Page |
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it Online |
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Renesas Electronics Corporation
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Part No. |
FY7ACH-03A-15
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OCR Text |
.................................. 7a 5.0 0.4 1.27 1.8 max. 6.0 4.4 ?? ?? ???? source gate drain ? ?? ?? ? ?? ? ? ??
sep. 2001 v (br) dss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) ... |
Description |
HIGH-SPEED SWITCHING USE
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File Size |
104.64K /
7 Page |
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it Online |
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