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Microsemi
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| Part No. |
APT20M34SFLLG APT20M34BFLLG
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| OCR Text |
...y time(i s = -74a, di / dt = 100a/s) reverse recovery charge(i s = -74a, di / dt = 100a/s) peak recovery current(i s = -74a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max ... |
| Description |
FREDFETs
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| File Size |
158.16K /
5 Page |
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it Online |
Download Datasheet
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Microsemi
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| Part No. |
APT1204R7SFLLG APT1204R7BFLLG
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| OCR Text |
...(i s = -i d 3.5a, di / dt = 100a/s) reverse recovery charge(i s = -i d 3.5a, di / dt = 100a/s) peak recovery current(i s = -i d 3.5a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps ... |
| Description |
FREDFETs
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| File Size |
159.83K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
APT1201R4SFLLG APT1201R4BFLLG
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| OCR Text |
...me(i s = -i d 9a, di / dt = 100a/s) reverse recovery charge(i s = -i d 9a, di / dt = 100a/s) peak recovery current(i s = -i d 9a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min ... |
| Description |
FREDFETs
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| File Size |
171.00K /
5 Page |
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it Online |
Download Datasheet |
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Central Semiconductor C...
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| Part No. |
CMLT5088EM-15
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| OCR Text |
...v eb =3.0v 50 na bv cbo i c =100a 50 135 v bv ceo i c =1.0ma 50 65 v bv ebo i e =100a 5.0 8.7 v v ce(sat) i c =10ma, i b =1.0ma 45 100 mv v ce(sat) i c =100ma, i b =10ma 110 400 mv v be(sat) i c =10ma, i b =1.0ma 700 800 mv h ... |
| Description |
SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR
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| File Size |
607.27K /
3 Page |
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Central Semiconductor C...
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| Part No. |
CMLT5087E CMLT5088E
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| OCR Text |
... eb =3.0v 50 na bv cbo i c =100a 50 135 150 v bv ceo i c =1.0ma 50 65 105 v bv ebo i e =100a 5.0 8.7 7.5 v v ce(sat) i c =10ma, i b =1.0ma 45 50 100 mv v ce(sat) i c =100ma, i b =10ma 110 225 400 mv v be(sat) i c =10ma, i b =1... |
| Description |
SURFACE MOUNT SILICON DUAL TRANSISTORS
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| File Size |
441.76K /
3 Page |
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it Online |
Download Datasheet |
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Central Semiconductor C...
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| Part No. |
CMLT5087EM-15
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| OCR Text |
...v eb =3.0v 50 na bv cbo i c =100a 50 150 v bv ceo i c =1.0ma 50 105 v bv ebo i e =100a 5.0 7.5 v v ce(sat) i c =10ma, i b =1.0ma 50 100 mv v ce(sat) i c =100ma, i b =10ma 225 400 mv v be(sat) i c =10ma, i b =1.0ma 700 800 mv h... |
| Description |
SURFACE MOUNT SILICON DUAL, MATCHED PNP TRANSISTOR
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| File Size |
677.07K /
3 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT8043SFLLG APT8043BFLLG
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| OCR Text |
...y time(i s = -20a, di / dt = 100a/s) reverse recovery charge(i s = -20a, di / dt = 100a/s) peak recovery current(i s = -20a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max ... |
| Description |
FREDFETs
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| File Size |
153.28K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT12031JFLL
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| OCR Text |
...y time(i s = -30a, di / dt = 100a/s) reverse recovery charge(i s = -30a, di / dt = 100a/s) peak recovery current(i s = -30a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max ... |
| Description |
FREDFETs
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| File Size |
91.61K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi
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| Part No. |
APT100S20BG
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| OCR Text |
...apacitance, v r = 200v i f = 100a i f = 200a i f = 100a, t j = 125c v r = 200v v r = 200v, t j = 125c characteristic / test conditionsmaximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse... |
| Description |
Si Schottky Diodes
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| File Size |
211.62K /
4 Page |
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it Online |
Download Datasheet |
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