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  -10-10v Datasheet PDF File

For -10-10v Found Datasheets File :: 77045    Search Time::5.172ms    
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    2SD661 2SD661A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD661 2SD661A
OCR Text ...5C) 0.550.1 0.450.05 4.10.2 Low noise voltage NV. High foward current transfer ratio hFE. M type package allowing easy automatic...10V GV=80dB Function=FLAT NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) 120 Rg=10...
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)

File Size 50.15K  /  3 Page

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    2SD662 2SD662B

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD662 2SD662B
OCR Text ...= 10V, IE = 0, f = 1MHz 50 80 5 10 200 400 5 30 30 220 150 1.2 V MHz pF min typ max 2 Unit A V V Emitter to base voltage Forward current transfer ratio 2SD662 2SD662B Collector to emitter saturation voltage Transition frequency Collec...
Description Silicon NPN epitaxial planer type(For high breakdown voltage general amplification) 70 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 38.37K  /  2 Page

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    TY Semiconductor Co., L...
Part No. IRLML5103TRPBF
OCR Text ... 0.1 1 10 0.1 1 10 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) -3.0v vgs top - 15v - 10v - 7.0v - 5...
Description Generation V Technology

File Size 1,243.41K  /  8 Page

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    2SD814 2SD814A 2SD0814

PANASONIC[Panasonic Semiconductor]
Part No. 2SD814 2SD814A 2SD0814
OCR Text ... 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Ba...10V fT -- I E VCB=10V Ta=25C Forward current transfer ratio hFE 500 Transition frequenc...
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification)

File Size 36.51K  /  2 Page

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    FDI045N10A

Fairchild Semiconductor
Part No. FDI045N10A
OCR Text ...on) = 3.8 m ( typ.)@ v gs = 10 v, i d = 100 a ? fast switching speed ? low gate charge, q g = 54 nc(typ.) ? high performance trench t...10v, i d = 100a - 3.8 4.5 m g fs forward transconductance v ds = 10v, i d = 100a ...
Description N-Channel PowerTrench? MOSFET 100 V, 164 A, 4.5 mΩ

File Size 301.92K  /  10 Page

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    2SD874 2SD874A

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD874 2SD874A
OCR Text ...5 5mA 4mA 0.50 3mA 2mA 0.25 1mA 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=10 Collector powe...10V Ta=25C fT -- I E Base to emitter saturation voltage VBE(sat) (V) 500 Transition freq...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 38.73K  /  2 Page

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    2SD875

PANASONIC[Panasonic Semiconductor]
Part No. 2SD875
OCR Text ...5mA 0.6 4mA 3mA 0.4 2mA 0.2 1mA 10 3 1 0.3 Ta=75C 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 25C -25C VCE(sat) -- IC IC/IB=10 C...10V 200 fT -- I E VCB=10V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 250 Ta=75...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

File Size 37.77K  /  2 Page

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    Infineon Technologies A...
Part No. BSP76E6433
OCR Text ...t voltage 1) v in -0.2 2) ... +10 continuous input current 2) -0.2v v in 10v v in < -0.2v or v in > 10v i in self limited | i in | 2 ma operating temperature t j -40 ...+150 c storage temperature t st g -55 ... +150 power di...
Description Smart Low Side Power Switch

File Size 218.73K  /  11 Page

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