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VISHAY SEMICONDUCTORS
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Part No. |
GB50NA120UX
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OCR Text |
...com 1 features ? npt generation v igbt technology ? square rbsoa ?hexfred ? clamping diode ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( ? 5 nh typical) ? ind... |
Description |
84 A, 1200 V, N-CHANNEL IGBT
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File Size |
174.00K /
10 Page |
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Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
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OCR Text |
...0 260 W W/oC
oC oC oC
UNITS V A A A V V
600
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent...IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Fig... |
Description |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk
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File Size |
170.23K /
8 Page |
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it Online |
Download Datasheet
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FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
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OCR Text |
...260 4 13 W W/oC
oC oC
UNITS V A A A A V V
600
s s
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause ...IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous powe... |
Description |
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB
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File Size |
151.95K /
8 Page |
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it Online |
Download Datasheet
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