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  v-igbt Datasheet PDF File

For v-igbt Found Datasheets File :: 10662    Search Time::1.609ms    
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    SEMIX452GAL126HDS

Semikron International
Part No. SEMIX452GAL126HDS
OCR Text ...trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e...igbt v ces t j =25c 1200 v i c t j = 150 c t c =25c 455 a t c =80c 319 a i cnom 300 a i crm i crm =...
Description IGBT Modules

File Size 416.33K  /  5 Page

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    VISHAY SEMICONDUCTORS
Part No. GB50NA120UX
OCR Text ...com 1 features ? npt generation v igbt technology ? square rbsoa ?hexfred ? clamping diode ?positive v ce(on) temperature coefficient ? fully isolated package ? speed 8 khz to 60 khz ? very low internal inductance ( ? 5 nh typical) ? ind...
Description 84 A, 1200 V, N-CHANNEL IGBT

File Size 174.00K  /  10 Page

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    HGTP10N40F1D HGTP10N50F1D

INTERSIL[Intersil Corporation]
Part No. HGTP10N40F1D HGTP10N50F1D
OCR Text ...10 75 0.6 -55 to +150 260 UNITS V V A A A V A A W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 ...
Description 10A 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

File Size 33.70K  /  5 Page

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    HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4D HGT1S12N60A4DS HGTG12N60A4D HGTG12N60A4DNL HGTP12N60A4DNL
OCR Text ...0 260 W W/oC oC oC oC UNITS V A A A V V 600 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent...IGBT and Diode at TJ = 125oC, ICE = 12A, VCE = 390V, VGE = 15V, RG = 10, L = 500H, Test Circuit (Fig...
Description    600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 5x11 mm; Packaging: Bulk

File Size 170.23K  /  8 Page

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    HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL

Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60A4 HGT1S12N60A4S9A HGTG12N60A4 FAIRCHILDSEMICONDUCTORCORP-HGTP12N60A4NL
OCR Text ...0 260 W W/oC oC oC oC UNITS V A A A V V 600 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent...IGBT and Diode at TJ = 25oC ICE = 12A VCE = 390V VGE =15V RG = 10 L = 500H Test Circuit (Figure 20) ...
Description 600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBTs 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V/ SMPS Series N-Channel IGBTs
600 V, SMPS N-Channel IGBT

File Size 180.89K  /  8 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ...10 W W/oC mJ oC oC oC UNITS V A A A V V s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent...IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Fig...
Description 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ...0 -55 to 150 300 260 5 10 UNITS V A A A V V W W/oC mJ oC oC oC s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings"...IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 25 L = 1mH Test Circuit (Figu...
Description From old datasheet system
27A, 600V, UFS Series N-Channel IGBTs
27A/ 600V/ UFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ...260 4 13 W W/oC oC oC UNITS V A A A A V V 600 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause ...IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous powe...
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 151.95K  /  8 Page

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    DD400S45KL3B5

Infineon Technologies AG
Part No. DD400S45KL3B5
OCR Text ...desmodul highinsulatedmodule v ces = 4500v i c nom = 400a / i crm = 800a typischeanwendungen typicalapplications ? ? hochleistungsum...igbt-module igbt-modules preparedby:mw approvedby:dts dateofpublication:2013-07-29 revision:...
Description Technische Information / Technical Information

File Size 586.64K  /  7 Page

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    HGTP12N60D1

INTERSIL[Intersil Corporation]
Part No. HGTP12N60D1
OCR Text ...ES 75 0.6 -55 to +150 260 UNITS V V A A A V W W/oC oC oC Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . ...IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 ...
Description 12A/ 600V N-Channel IGBT
12A, 600V N-Channel IGBT

File Size 31.28K  /  4 Page

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For v-igbt Found Datasheets File :: 10662    Search Time::1.609ms    
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