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    PD78CN10NG

INFINEON TECHNOLOGIES AG
Part No. PD78CN10NG
OCR Text ...8 m ? v gs =10 v, i d =13 a, (to251) -5978 v gs =10 v, i d =13 a, (to263) -6179 v gs =10 v, i d =13 a, (to220, to262) -6180 gate resistance r g - 0.8 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =13 a 713 -s values 4...
Description 13 A, 100 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

File Size 533.00K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU09P06PL SPD09P06PL
OCR Text to251-3-1 Feature SIPMOS =Power-Transistor P-Channel Enhancement mode Logic Level 175C operating temperature Avalanche rated dv/dt rated -60 0.25 -9.7 P-TO252 V Drain pin 2 Type SPD09P06PL SPU09P06PL Package P-TO252 P...
Description Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.25
SIPMOS Power-Transistor
From old datasheet system

File Size 228.11K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU11N10 SPD11N10
OCR Text ... Avalanche rated dv/dt rated P-to251 V m A Type SPD11N10 SPU11N10 Package P-TO252 P-to251 Ordering Code Q67042-S4121 Q67042-S4122 Marking 11N10 11N10 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parame...
Description Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=179mOhm, 11A, NL
SIPMOS Power-Transistor

File Size 489.50K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU30N03S2-08
OCR Text to251 -3-1 V m A * Enhancement mode * Low On-Resistance RDS(on) * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated Type SPU30N03S2-08 Pa...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 8.2mOhm, 30A, NL
OptiMOS Power-Transistor

File Size 256.65K  /  8 Page

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    Infineon
Part No. IPS04N03LA
OCR Text ... pg-to252-3-11 pg-to252-3-23 pg-to251-3-11 pg-to251-3-21 ordering code q67042-s4276 q67042-s4282 q67042-s4243 q67042-s4271 marking 04n03la 04n03la 04n03la 04n03la rev. 1.91 page 1 2004-07-27 ipd04n03la g ipf04n03la g ips04n03la g ...
Description OptiMOS®2 - Power packages

File Size 461.34K  /  11 Page

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    SIEMENS AG
Part No. SPU03N60S5
OCR Text ...spd03n60s5 600 v 3.2 a 1.4 w p-to251-3-1 p-to252 03n60s5 03n60s5 q67040-s4227 q67040-s4187 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d ...
Description Cool MOS Power-Transistor(Cool MOS 功率晶体 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 107.70K  /  11 Page

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    IPS118N10NG

Infineon Technologies AG
Part No. IPS118N10NG
OCR Text ...ry type ips118n10n g package pg-to251-3 marking 118n10n rev. 2.1 page 1 2008-11-19 ips118n10n g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 1.2 k/w r thja minimal ...
Description OptiMOS?2 Power-Transistor

File Size 318.46K  /  9 Page

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