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CEL[California Eastern Labs]
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Part No. |
NE662M16-T3-A NE662M16
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OCR Text |
...le in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/f...98.23 -102.48 -106.53 -110.24 -113.97 -117.60 -120.80 -124.09 -127.67 -130.76 -133.98 -136.85 -139.8... |
Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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File Size |
153.11K /
10 Page |
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NEC[NEC]
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Part No. |
NE67383 NE67300
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OCR Text |
... at VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -5 V Thermal Resistance (Channel-to-Ambient) UNITS dB dB dBm mA V mS mA C...98 230 49 42
+0.06 0.1 -0.03
1.6 MAX
Bonding Pad Area.
Chip Thickness: 140 m
TYPICAL ... |
Description |
LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
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File Size |
94.09K /
7 Page |
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it Online |
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CEL[California Eastern Labs]
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Part No. |
NE678M04-T2-A NE678M04
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OCR Text |
...le in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an...98 89.80 85.45 81.38 77.66 61.44 52.84 50.05 47.32 33.99 21.32 9.12 -2.44 -13.44 -23.86 -33.79 -43.0... |
Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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File Size |
127.57K /
8 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
BSL314PE-13
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OCR Text |
...pliant ? halogen free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter 1) symbol conditions...98 % 0 50 100 150 200 250 - 60 - 20 20 60 100 140 180 r ds(on) [m w ] ... |
Description |
OptiMOS?P 3 Small-Signal-Transistor
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File Size |
347.15K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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