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				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTY25N60E MTY25N60E_D ON2716
OCR Text	... data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load...
Description	TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM From old datasheet system
File Size	236.67K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTY30N50E ON2718 MTY30N50E_D MTY30N50
OCR Text	... data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load...
Description	From old datasheet system TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM
File Size	237.69K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTMD2C02R2
OCR Text	... data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load...
Description	Power MOSFET 2 Amps / 20 Volts Power MOSFET 2 Amps, 20 Volts, Complimentary SO-8, Dual
File Size	117.29K / 16 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP35N15
OCR Text	... data is used. In most cases, a satisfactory estimate of current. The voltage is determined by Ldi/dt, but since di/dt average input current (IG(AV)) can be made from a is a function of drain current, the mathematical solution is rudimentar...
Description	Power MOSFET 37 Amps / 150 Volts Power MOSFET 37 Amps, 150 Volts
File Size	73.92K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D
OCR Text	... data is used. In most cases, a satisfactory estimate of current. The voltage is determined by Ldi/dt, but since di/dt average input current (IG(AV)) can be made from a is a function of drain current, the mathematical solution is rudimentar...
Description	Power MOSFET 52 Amps, 100 Volts Power MOSFET 52 Amps 100 Volts
File Size	72.62K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP60N06 NTP60N06G NTB60N06 NTB60N06G NTB60N06T4 NTB60N06T4G
OCR Text	... data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load...
Description	Power MOSFET 60 Amps, 60 Volts 60 V, 60 A, N-Channel TO-220 and D2PAK 60 V, 60 A, N−Channel TO−220 and D2PAK 60 V / 60 A / N&Channel TO&220 and D2PAK
File Size	85.70K / 10 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	NTP85N03 NTB85N03 NTB85N03T4
OCR Text	... data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so that t = Q/IG(AV) During the rise and fall time interval when switching a resistive load...
Description	Power MOSFET 85 Amps / 28 Volts Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封装的功率MOSFET)
File Size	80.80K / 12 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STM1645-10 2875
OCR Text	...tsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink. The heatsink mounting surface under the module should be flat to wit...
Description	RF POWER MODULES SATELLITE COMMUNICATIONS APPLICATIONS From old datasheet system
File Size	50.06K / 5 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STM1645-30
OCR Text	...tsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink. The heatsink mounting surface under the module should be flat to wit...
Description	RF POWER MODULE SATELLITE COMMUNICATION APPLICATIONS
File Size	42.14K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STM901-30 2879
OCR Text	...tsink, it is recommended that a satisfactory thermal compound such as Dow Corning 340, Wakefield 120-2 or equivalent be applied between the module flange and the heatsink. The heatsink mounting surface under the module should be flat to wit...
Description	RF Power Module Linear Base Station Applications(用于线性基站的RF功率模块) From old datasheet system
File Size	144.90K / 8 Page	View it Online	Download Datasheet

For satisfactory Found Datasheets File :: 2671 Search Time::2.609ms
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