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RAYTHEON[Raytheon Company]
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| Part No. |
RMPA61800
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| OCR Text |
...The amplifier uses a .25 micron pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded... |
| Description |
Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC
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| File Size |
378.43K /
7 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RMPA61810
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| OCR Text |
...he amplifier uses a 0.25 micron pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded... |
| Description |
6-18 GHz 1W Power Amp
Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC
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| File Size |
544.49K /
6 Page |
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it Online |
Download Datasheet |
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ETC[ETC]
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| Part No. |
TC2571
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| OCR Text |
...e TC2571 is packaged the TC1501 pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC ... |
| Description |
1W Low-Cost Packaged PHEMT GaAs Power FETs
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| File Size |
150.53K /
3 Page |
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it Online |
Download Datasheet |
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TRANSCOM
ETC[ETC]
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| Part No. |
TC2696
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| OCR Text |
...696 is packaged with the TC1606 pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent qua... |
| Description |
2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
From old datasheet system
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| File Size |
38.19K /
2 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQPED
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| OCR Text |
...MIM Metal
NiCr
Nitride N+ pseudomorphic Channel
Metal 0
Isolation Implant Isolation Implant MIM Capacitor NiCr Resistor
E-Mode / D-Mode
pHEMT
Semi-Insulating GaAs Substrate
* * * * * *
0.5 um pHEMT Device Cross-Se... |
| Description |
Precision, 100UA Gain Selectable Amplifier
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| File Size |
96.58K /
3 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TQPHT
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| OCR Text |
...Isolation Implant
Nitride N+ pseudomorphic Channel
Metal 0
pHEMT
MIM Capacitor Semi-Insulating GaAs Substrate
NiCr Resistor
* * * * * *
0.5 um pHEMT Device Cross-Section
D-Mode, -0.8 V Vp InGaAs Active Layer pHEMT Pr... |
| Description |
0.5 um pHEMT Foundry Service
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| File Size |
204.87K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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