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Infineon Technologies AG
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Part No. |
DBFZ800R12KL4CV
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OCR Text |
...0,1 - s einschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,8 w , t vj = 125c, l...1000 1200 1400 1600 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 tj = 25c tj = 125c ausgangskennlinie (typisc... |
Description |
IGBT Module IGBT模块
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File Size |
93.15K /
8 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
1N4747A 1N4741A 1N4749AT/R 1N4737A
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OCR Text |
pro?le 1.1 general description low voltage regulator diodes in hermetically sealed small sod66 (do-41) glass packages. the series consists o...1000 mw n tolerance series: 5% n working voltage range: nom. 3.3 v to 24 v n small hermetically sea... |
Description |
Voltage regulator diodes 24 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
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File Size |
47.07K /
10 Page |
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it Online |
Download Datasheet
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EUPEC GMBH ?CO KG
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Part No. |
FZ1200R33KF2-B5 EUPEC-FZ1200R33KF2-B5
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OCR Text |
... = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzsc...1000 0 0 300 600
Eon Eoff Erec
900
1200
1500
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2100
2400
IC [A]
Schaltve... |
Description |
Hochstzulassige Werte / Maximum rated values Hochstzulassige话高最大额定 IGBT Power Module
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File Size |
183.07K /
9 Page |
View
it Online |
Download Datasheet
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Price and Availability
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