precision extended bwidth rms- pdf Datasheet P14 Description --- IC-ON-LINE


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precision extended bwidth rms- Datasheet PDF File

For precision extended bwidth rms- Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Electronic Theatre Controls, Inc.
Part No.	STK12C68-5S30 STK12C68-5W30
Description	Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA NVRAM (EEPROM Based) NVRAM中（EEPROM的基础
File Size	421.99K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	Z8916924VSC Z8916520VSC
Description	8-BIT MICROCONTROLLER Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 8位微控制
File Size	1,176.09K / 23 Page	View it Online	Download Datasheet

				Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
Part No.	BD825-16 BD827-10 BD827-6 BD829-6
Description	SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 1.5A I(C) \| TO-202 晶体管\|晶体管\|叩\| 45V的五（巴西）总裁\| 1.5AI（丙）\|02 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 2A I(C) \| TO-202 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一（c）\|202
File Size	205.03K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q67100-H9020 SDE2526 Q67100-H3262 Q67100-H3261 SDE2526-5 SDE2526-5A2G SDE25X26-5A2G SDE25X26A2 Q67100-H9036
Description	Nonvolatile Memory 2-Kbit E2PROM with I2C Bus Interface with extended Temperature Range 非易失性内与I2C总线接口与千位E2PROM的扩展温度范 OSC 5V SMT 7X5 CMOS PROGRM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 Nonvolatile Memory 2-Kbit EEPROM with IIC Bus Interface with extended Temperature Range(2-K位EEPROM(带IIC总线接口,扩展温度范围)) From old datasheet system
File Size	231.60K / 10 Page	View it Online	Download Datasheet

				Crydom, Inc.
Part No.	BD437/D
Description	Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
File Size	46.41K / 4 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
Description	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with extended Data Out
File Size	550.56K / 35 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
File Size	803.02K / 35 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
Description	2M x 8Bit CMOS Dynamic RAM with extended Data Out Data Sheet 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
File Size	254.30K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 KM48C8104BK-5 KM48C8104BS-6 KM48C8104BS-5
Description	8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
File Size	382.88K / 21 Page	View it Online	Download Datasheet

				ZILOG INC Zilog, Inc.
Part No.	Z8937320ASC Z8937320VSC Z8937320FSC Z8927320VSC Z8927320VSG Z8922320VEG ZILOGINC-Z8932320VEG
Description	16-BIT, 20 MHz, OTHER DSP, PQCC44 Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes 16-BIT DIGITAL SIGNAL PROCESSORS WITH A/D CONVERTER
File Size	630.88K / 60 Page	View it Online	Download Datasheet

For precision extended bwidth rms- Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |