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  non-encapsulated Datasheet PDF File

For non-encapsulated Found Datasheets File :: 2169    Search Time::1.641ms    
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    PMLL4150 PMLL4151 PMLL4153

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMLL4150 PMLL4151 PMLL4153
OCR Text ...PMLL4150 PMLL4151 PMLL4153 IFSM non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage ...
Description High-speed diodes

File Size 39.13K  /  9 Page

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    Maxim
Part No. DS1553P
OCR Text ...et, battery monitor, and 8k x 8 non-volatile static RAM. User access to all registers within the DS1553 is accomplished with a bytewide interface as shown in Figure 1. The RTC Registers contain century, year, month, date, day, hours, minute...
Description 64K NV Y2KC Real Time Clocks RAM

File Size 276.32K  /  19 Page

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    MAXIM - Dallas Semiconductor
Part No. DS1556P DS1556
OCR Text ..., battery monitor, and 128k x 8 non-volatile static RAM. User access to all registers within the DS1556 is accomplished with a bytewide interface as shown in Figure 1. The RTC Registers contain century, year, month, date, day, hours, minute...
Description 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
1MEG NV Y2KC Real Time Clocks RAM

File Size 280.99K  /  20 Page

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    Dallas
Part No. DS1556
OCR Text ..., battery monitor, and 128k x 8 non-volatile static RAM. User access to all registers within the DS1556 is accomplished with a bytewide interface as shown in Figure 1. The RTC Registers contain century, year, month, date, day, hours, minute...
Description 1MEG NV Y2KC Timekeeping RAM

File Size 282.84K  /  21 Page

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    IR25XB02H IR25XB04H IR25XB06H IR25XB08H

International Rectifier, Corp.
Part No. IR25XB02H IR25XB04H IR25XB06H IR25XB08H
OCR Text ...x. V 140 280 420 560 VRSM , max non-repetitive IRRM max. IRRM max. peak rev. voltage @ rated VRRM @ rated VRRM TJ = TJ max. TJ = 25C TJ = 150C V A A 275 500 725 900 5 5 5 5 250 250 250 250 IR25XB..H Forward Conduction Parameters IO ...
Description 25.0 Amps Single Phase Full Wave 二十五点?安培单相全
600V Bridge in a IR25XB package
200V Bridge in a IR25XB package
800V Bridge in a IR25XB package
400V Bridge in a IR25XB package

File Size 81.09K  /  4 Page

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    N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4S511633C-N K4S511633C-P K4S511633C-YL K4S511633C-YL_N1H K4S511633C-YL_

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4S511633C-N K4S511633C-P K4S511633C-YL K4S511633C-YL_N1H K4S511633C-YL_N1L K4S511633C-YL/N80 K4S511633C-YL/N1L K4S511633C-YL/N1H K4S511633C-YN80 K4S511633C-YP1L
OCR Text ... Precharge Standby Current in non power-down mode ICC2NS Active Standby Current in power-down mode ICC3P mA 25 15 15 50 mA ICC3PS CK...encapsulated within a single plastic leaded package. 2. Samsung are not designed or manufactured for...
Description 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS

File Size 60.20K  /  8 Page

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    QED221 QED222 QED223

FAIRCHILD[Fairchild Semiconductor]
Part No. QED221 QED222 QED223
OCR Text ...Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. CATHODE DESCRIPTION The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package. FEATURES * != 880 nm * Chip m...
Description PLASTIC INFRARED LIGHT EMITTING DIODE

File Size 102.36K  /  4 Page

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    Philips
Part No. BAS221
OCR Text ...repetitive peak forward current non-repetitive peak forward current note 1; see Fig.2 tp < 0.5 ms; 0.25 square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-cir...
Description General purpose diode

File Size 52.95K  /  8 Page

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    BAT54

STMicroelectronics
Part No. BAT54
OCR Text ...ontinuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25C ...
Description SMALL SIGNAL SCHOTTKY DIODE

File Size 57.95K  /  5 Page

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    BAV99S

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BAV99S
OCR Text ...repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Solder points at pins: 2, 3, 5 and 6. total power dissipation storage temperatur...
Description High-speed switching diode array

File Size 62.47K  /  12 Page

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