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ONSEMI[ON Semiconductor]
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| Part No. |
MMDF3N03HDR2 MMDF3N03HD MMDF3N03HD-D
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| OCR Text |
...pikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high di/dts. The diode's negative di/dt during ta is directly controlled by the device clearing the store... |
| Description |
Power MOSFET 3 Amps, 30 Volts 4.1 A, 30 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 3 Amps, 30 Volts N-Channel SO-8, Dual
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| File Size |
118.94K /
12 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTP75N03HDL MTP75N03HDL_D ON2641
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| OCR Text |
...pikes, and current ringing. The mechanisms at work are finite irremovable circuit parasitic inductances and capacitances acted upon by high
75 TJ = 25C VGS = 0 V
di/dts. The diode's negative di/dt during ta is directly controlled by the... |
| Description |
OSCILLATORS 100PPM -10 70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS
From old datasheet system
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| File Size |
235.16K /
8 Page |
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it Online |
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Macronix
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| Part No. |
MX29LV160BBTC
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| OCR Text |
...imize the erase and programming mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV160BT/BB uses a 2.7V~3.6V VC... |
| Description |
Flash Memory
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| File Size |
797.73K /
60 Page |
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it Online |
Download Datasheet |
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Price and Availability
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