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For ma. Found Datasheets File :: 341383 Search Time::4.313ms
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				TOSHIBA
Part No.	TPH8R008NH
OCR Text	...4.0 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1, 2, 3: source 4: gate 5, 6, 7, 8: drain 4. 4. 4. 4. absolu...
Description	Power MOSFET (N-ch single 60V<VDSS≤150V)
File Size	236.29K / 9 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SB774 2SB0774
OCR Text	...0 400 150 -55 ~ +150 Unit V V V mA mA mW C C 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Par...
Description	Silicon PNP epitaxial planer type(For low-frequency amplification) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
File Size	34.73K / 2 Page	View it Online	Download Datasheet

				WINGS[Wing Shing Computer Components]
Part No.	2SB778
OCR Text	...CE(sat) Test Condition IC=-5 mA IE=0 IC=-10 mA RBE= IE=-5mA IC=0 VCB=-60V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-5V IC=-2A IC=-3A IB=-0.3A Min -120 -120 -6 Typ Max Unit V V V mA mA 55 120 -0.1 -0.1 160 -1.5 V Wi...
Description	PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER/ DC TO DC CONVERTER) PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER)
File Size	47.49K / 1 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCC8073
OCR Text	...2.3 v (v ds = 10 v, i d = 0.3 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1, 2, 3: source 4: gate 5, 6, 7, 8: drain 4. 4. 4. 4. absolu...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	234.93K / 9 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB788 2SD958
OCR Text	...0 400 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Base 2:Collector 3:Emitter 3 0.550.1 1.250.05 0.450.05 2 1 2.5 2.5 EIAJ:SC-71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Col...
Description	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
File Size	35.77K / 2 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SB790 2SD969
OCR Text	...C (mW) Collector current IC (mA) - 0.8 -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA - 0.6 - 0.4 - 0.3 - 0.1 - 0.03 - 0.2 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector ...
Description	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)
File Size	36.83K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	...V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -120 V, IE = 0 VCE = -100 V, RBE = VCE = -3 V, IC = -4 A1 I C = -4 A, IB = -8 mA1 I C = -8 A, IB = -80 mA1 I C = -4 A, IB = -8 mA1 I C = -8 A, IB = -80 mA*1 I C = -4...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SB792 2SB792A 2SD814 2SA1310 2SB0792A
OCR Text	...ture Storage temperature V V mA mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : I(2SB792) 2F(2SB792A) s Electrical Characteristics Parameter Collector cutoff current Collector to ...
Description	Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
File Size	36.47K / 2 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK8P60W5
OCR Text	...4.5 v (v ds = 10 v, i d = 0.4 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate 2: drain (heat sink) 3: source 4. 4. 4. 4. absolute ...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	280.85K / 10 Page	View it Online	Download Datasheet

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