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Micron Technology, Inc.
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| Part No. |
MT4C16257
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| OCR Text |
...egardless of we# or ras#). this late we# pulse results in a read write cycle. the 16 data inputs and 16 data outputs are routed through 16 pins using common i/o, and pin direction is controlled by oe#. fast page mode operations allow faster... |
| Description |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
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| File Size |
209.91K /
18 Page |
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it Online |
Download Datasheet
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Sony
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| Part No. |
CXK77B1841AGB CXK77B3641AGB
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| OCR Text |
late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
The CXK77B3641A (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits) are high speed BiCMOS synchronous sta... |
| Description |
4Mb late Write LVTTL High Speed Synchronous SRAMs (128K x 36 or 256K x 18 Organization)
From old datasheet system
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| File Size |
221.04K /
28 Page |
View
it Online |
Download Datasheet |
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Sony
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| Part No. |
CXK77B1841GB
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| OCR Text |
late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization)
The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input regist... |
| Description |
4Mb late Write LVTTL High Speed Synchronous SRAM (256K x 18 Organization)
From old datasheet system
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| File Size |
199.01K /
22 Page |
View
it Online |
Download Datasheet |
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Micron Technology, Inc.
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| Part No. |
MT4LC8M8C2TG-6
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| OCR Text |
...en low prior to cas# falling. a late write or read-modify-write occurs when we# falls after cas# is taken low. during early write cycles, the data outputs (q) will remain high-z, regardless of the state of oe#. during late write or read-mod... |
| Description |
DRAM 内存
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| File Size |
392.10K /
22 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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