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For l m h Found Datasheets File :: 151303 Search Time::4.953ms
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				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	l l l l l l IRF9953 hEXFET(R) Power mOSFET 8 7 Generation V Technology Ultra low On-Resistance Dual P-Channel mOSFET Surface mount V...m IN .0 5 3 2 .0 0 4 0 .0 1 4 .0 0 7 5 .1 8 9 .1 5 0 mAX .0688 .0098 .018 .0 09 8 .1 96 .157 m Il...
Description	Power mOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	l l l l l l IRF9956 hEXFET(R) Power mOSFET 8 Generation V Technology Ultra low On-Resistance Dual N-Channel mOSFET Surface mount Ver...m IN .0 5 3 2 .0 0 4 0 .0 1 4 .0 0 7 5 .1 8 9 .1 5 0 mAX .0688 .0098 .018 .0 09 8 .1 96 .157 m Il...
Description	Power mOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF9Z14S IRF9Z14l IRF9Z14STRl IRF9Z14STRR
OCR Text	l hEXFET(R) Power mOSFET Advanced Process Technology Surface mount (IRF9Z14S) l low-profile through-hole (IRF9Z14l) l 175C Operating Tempe...m BAm 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) mINImUm RECO mm ENDED F OO TP RINT 11...
Description	Power mOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率mOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power mOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) hEXFET? Power mOSFET -60V Single P-Channel hEXFET Power mOSFET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24l IRF9Z24S IRF9Z24STRR IRF9Z24STRl
OCR Text	l hEXFET(R) Power mOSFET Advanced Process Technology Surface mount (IRF9Z24S) l low-profile through-hole (IRF9Z24l) l 175C Operating Tempe...m BAm 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) mINImUm RECO mm ENDED F OO TP RINT 11...
Description	-60V Single P-Channel hEXFET Power mOSFET in a D2-Pak package Power mOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power mOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24Nl IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRl
OCR Text	l hEXFET(R) Power mOSFET Advanced Process Technology Surface mount (IRF9Z24NS) l low-profile through-hole (IRF9Z24Nl) l 175C Operating Tem...m ps ) 9 D.U.T. + -10V 6 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time T...
Description	-60V Single P-Channel hEXFET Power mOSFET in a TO-262 package -55V Single P-Channel hEXFET Power mOSFET in a D2-Pak package Power mOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率mOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power mOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.175 G ...m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case...
Description	-55V Single P-Channel hEXFET Power mOSFET in a TO-220AB package Power mOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34l IRF9Z34S IRF9Z34STRl IRF9Z34STRR
OCR Text	l hEXFET(R) Power mOSFET Advanced Process Technology l Surface mount (IRF9Z34S) l low-profile through-hole (IRF9Z34l) l 175C Operating Tem...m BAm 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) mINImUm RECO mm ENDED F OO TP RINT 11...
Description	-60V Single P-Channel hEXFET Power mOSFET in a D2-Pak package Power mOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power mOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34Nl IRF9Z34NS IRF9Z34NSTRl IRF9Z34NSTRR
OCR Text	l hEXFET(R) Power mOSFET Advanced Process Technology Surface mount (IRF9Z34NS) l low-profile through-hole (IRF9Z34Nl) l 175C Operating Tem...m J) l 500 TOP 400 RG -2 0V tp D .U .T IA S 0.0 1 D R IV E R VDD A BO TTOm ...
Description	Power mOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power mOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel hEXFET Power mOSFET in a D2-Pak package -55V Single P-Channel hEXFET Power mOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	l 175C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.1...m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case...
Description	Power mOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power mOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel hEXFET Power mOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-hCB0 K9F5608Q0B-hIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-hCB0 K9F5608U0B-hIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-hCB0 K9F5616U0B-hIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-hCB0 K9F5616Q0B-hIB0
OCR Text	... are Don' care ==> A3 ~ A7 are "l" t 1. IOl(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA 2. AC parameter ...m A B Side View 9.000.10 0.08mAX 5 11.000.10 K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q...
Description	32m x 8 Bit / 16m x 16 Bit NAND Flash memory 32m x 8 Bit , 16m x 16 Bit NAND Flash memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

For l m h Found Datasheets File :: 151303 Search Time::4.953ms
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