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IXYS[IXYS Corporation]
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| Part No. |
IXFH9N80 IXFH8N80
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| OCR Text |
...IGSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient VGS = 20 VDC, ...4 7 2600 VGS = 0 V, VDS = 25 V, f = 1 MHz 240 60 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG =... |
| Description |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
202.38K /
4 Page |
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it Online |
Download Datasheet
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KEC Holdings
KEC[KEC(Korea Electronics)]
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| Part No. |
KMB2D0N60SA
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| OCR Text |
...
A H
2 G 1
3
VDSS=60V, ID=2A Drain-Source ON Resistance RDS(ON)=160m (Max.) @ VGS=10V RDS(ON)=220m (Max.) @ VGS=4.5V Super Hige Dense Cell Design
P
P
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.... |
| Description |
N-Ch Trench MOSFET N沟道沟道MOSFET
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| File Size |
467.51K /
5 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOI5N40
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| OCR Text |
...zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =...4.2a, r g =25 w t d(off) 24 ns t f 11.5 ns t rr 125 160 200 ns q rr 0.7 0.93 1.2 m c body diode re... |
| Description |
400V,4.2A N-Channel MOSFET
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| File Size |
618.08K /
6 Page |
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it Online |
Download Datasheet |
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