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IXYS
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Part No. |
IXGK35N120C IXGX35N120C
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OCR Text |
...1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c70a i c90 t c = 90 c35a i cm t c = 25 c, 1 ms 140 a ssoa v ge = 15 v, t vj = 125 c, r g = 5 ? i cm = 90 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 ... |
Description |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
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File Size |
1,842.72K /
2 Page |
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it Online |
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MGE UPS Systems
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Part No. |
APT35GP120B
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OCR Text |
... volts a na symbol v ces v ge v gem i c1 i c2 i cm rbsoa p d t j ,t stg t l apt35gp120b 1200 20 30 96 46 140 140a @ 960v 540 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltag... |
Description |
High reliability part. For price, availability and ordering contact Coilcraft Critical Products, cp@coilcraft.com 电压200伏室的Vce(on):均为3.9V编号(续):四十六安培|超快IGBT的家
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File Size |
80.36K /
6 Page |
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Fairchild Semiconductor Corporation
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Part No. |
ISL9V5036S3ST
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OCR Text |
...t t c = 110c, see fig 9 31 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 250 w power dissipation derating t c > 25c 1.67 w/c t j operating junction temperature range -40 to 175 c t stg storage junc... |
Description |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.3 to 5.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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File Size |
136.31K /
8 Page |
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it Online |
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Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
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Part No. |
ISL9V3036D3ST ISL9V3036S3ST
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OCR Text |
...t t c = 110c, see fig 9 17 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 150 w power dissipation derating t c > 25c 1.0 w/c t j operating junction temperature range -40 to 175 c t stg storage junct... |
Description |
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT 21 A, 350 V, N-CHANNEL IGBT, TO-252AA
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File Size |
134.89K /
8 Page |
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it Online |
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Price and Availability
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