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Microsemi
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| Part No. |
2N7335 2N7335E3
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| OCR Text |
...t j = +125 c i dss1 i dss2 - 25 - 0.25 a ma static drain - source on - state resistance v gs = - 10 v, cond . a pulsed per mil -s td - 750, sect. 4, i d = - 0. 50 a t j = +125 c v gs = - ... |
| Description |
P-Channel
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| File Size |
377.65K /
6 Page |
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Microsemi
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| Part No. |
2N7380
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| OCR Text |
...= 80 v, t j = +125 c i dss2 0.25 ma static drain - source on - state resistance v gs = 1 2 v, i d = 9.1 a pulsed r ds(on)1 0.18 ? st atic drain - source on - state resistance v gs = 1 2 v, i d ... |
| Description |
N-Channel
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| File Size |
360.88K /
7 Page |
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Microsemi
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| Part No. |
2N7381
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| OCR Text |
... 160 v, t j = +125 c i dss2 0.25 ma static drain - source on - state resistance v gs = 1 2 v, i d = 6.0 a pulsed r ds(on)1 0.40 ? stati c drain - source on - state resistance v gs = 1 2 v, i d =... |
| Description |
N-Channel
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| File Size |
350.85K /
7 Page |
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it Online |
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Microsemi
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| Part No. |
2N7382
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| OCR Text |
...v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on-state resistance v gs = -12v, i d = -7.0a pulsed v gs = -12v, i d = -11.0a pulsed t j = -125c v gs = -12v, i d = -7.0a pulsed r ds(... |
| Description |
PNP Transistor
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| File Size |
169.16K /
4 Page |
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Microsemi
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| Part No. |
2N7389
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| OCR Text |
...v, t j = +125c i dss1 i dss2 -25 -0.25 adc madc static drain-source on-state resistance v gs = -12v, i d = -4.1a pulsed v gs = -12v, i d = -6.5a pulsed t j = +125c v gs = -12v, i d = -4.1a pulsed r ds(o... |
| Description |
P-Channel
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| File Size |
297.72K /
5 Page |
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it Online |
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Microsemi
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| Part No. |
2N6784E3 2N6786E3 2N6782E3
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| OCR Text |
... 2n6782 2n6784 2n6786 i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 2.25 a pulsed v gs = 10 v, i d = 1.50 a pulsed v gs = 10 v, i d = 0.80 a pulsed ... |
| Description |
N-Channel
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| File Size |
490.88K /
9 Page |
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it Online |
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Microsemi
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| Part No. |
2N6790U
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| OCR Text |
... c 2n6788 u 2n6790 u i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 3. 5 a pulsed v gs = 10 v, i d = 2.25 a pulsed 2n6788 u 2n6 790 u r ds(on)1 0.30 0.80 ... |
| Description |
N-Channel
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| File Size |
439.59K /
8 Page |
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Microsemi
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| Part No. |
2N6770E3 2N6768E3
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| OCR Text |
... 2n6766 2n6768 2n6770 i dss2 1.0 ma drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 160 v, t j = +125 c v gs = 0 v, v ds = 320 v, t j = +125 c v gs = 0 v, v ds = 40... |
| Description |
N-Channel
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| File Size |
563.47K /
9 Page |
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Microsemi
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| Part No. |
JAN2N7236U
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| OCR Text |
... - 10 0 v, t j = +125 c i dss2 - 1.0 ma drain current v gs = 0 v, v ds = - 80 v, t j = +125 c i dss3 - 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = - 11 .0 a pulsed ... |
| Description |
P-Channel
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| File Size |
305.09K /
7 Page |
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Calogic
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| Part No. |
U441
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| OCR Text |
...a 20 t = 25 to 125 o c i dss1 i dss2 saturation drain current ratio 0.97 v ds = 10v, v gs = 0v g fs1 g fs2 transconductance ratio 0.97 v dg = 10v, i d = 5ma f= 1 khz cmrr common mode rejection ratio 85 db v dd = 5 to 10v, i d = 5ma no... |
| Description |
N-Channel JFET Monolithic Dual
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| File Size |
25.64K /
2 Page |
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it Online |
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