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  diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 4980    Search Time::0.969ms    
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    BU2527AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527AX
OCR Text Diffused Power Transistor BU2527AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 72.94K  /  7 Page

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    BU2527A

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2527A
OCR Text Diffused Power Transistor BU2527A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic ...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V...
Description Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 50.82K  /  7 Page

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    BU2527DF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2527DF
OCR Text Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 80.99K  /  7 Page

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    BU2527DX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527DX
OCR Text Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 83.04K  /  7 Page

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    BU2530AL

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2530AL
OCR Text Diffused Power Transistor BU2530AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT...
Description Silicon Diffused Power Transistor

File Size 65.47K  /  6 Page

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    BU2530AW

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2530AW
OCR Text Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT...
Description Silicon Diffused Power Transistor(硅扩散功率型晶体 16 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247

File Size 69.04K  /  6 Page

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    BU2532AL

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2532AL
OCR Text Diffused Power Transistor BU2532AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT...
Description Silicon Diffused Power Transistor

File Size 60.67K  /  6 Page

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    BU2532AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2532AW
OCR Text Diffused Power Transistor BU2532AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 16 40 10 15 200 10 125 150 150 UNIT...
Description Silicon Diffused Power Transistor

File Size 61.98K  /  6 Page

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    BU2730 BU2730AL

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2730 BU2730AL
OCR Text Diffused Power Transistor BU2730AL GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1700 825 16 40 10 15 200 10 125 150 150 UNIT...
Description Silicon Diffused Power Transistor

File Size 16.71K  /  4 Page

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    BU4506AX BU4506

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU4506AX BU4506
OCR Text Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn t...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 5 8 3 5 4 45 150 150 UNIT V V A A A...
Description Silicon Diffused Power Transistor

File Size 44.79K  /  6 Page

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For diffused-junction Found Datasheets File :: 4980    Search Time::0.969ms    
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