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  common drain p-channel 1 5v po Datasheet PDF File

For common drain p-channel 1 5v po Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AON5810
Description common-drain Dual N-Channrl Enhancement Mode Field Effect Transistor

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    IRFF120 IRFF121 IRFF122 IRFF123

General Electric Solid State
GE Solid State
Part No. IRFF120 IRFF121 IRFF122 IRFF123
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE poWER MOS FIELD-EFFECT TRANSISTORS

File Size 161.85K  /  5 Page

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    MAX6315US25D1-T MAX6315US25D2-T MAX6315US25D3-T MAX6315US25D4-T MAX6315US38D1-T MAX6315US38D2-T MAX6315US38D3-T MAX6315U

Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
http://
MAXIM[Maxim Integrated Products]
电源管理
Maxim Integrated Products, Inc.
Part No. MAX6315US25D1-T MAX6315US25D2-T MAX6315US25D3-T MAX6315US25D4-T MAX6315US38D1-T MAX6315US38D2-T MAX6315US38D3-T MAX6315US38D4-T MAX6315US39D1-T MAX6315US39D2-T MAX6315US39D3-T MAX6315US39D4-T MAX6315US2 MAX6315US37D4-T MAX6315US45D3-T MAX6315 MAX6315US50D4-T MAX6315US26D1-T MAX6315US26D2-T MAX6315US26D3-T MAX6315US26D4-T MAX6315US27D1-T MAX6315US27D2-T MAX6315US27D3-T MAX6315US27D4-T MAX6315US28D1-T MAX6315US28D2-T MAX6315US28D3-T MAX6315US28D4-T MAX6315US29D1-T MAX6315US29D2-T MAX6315US29D3-T MAX6315US29D4-T MAX6315US30D1-T MAX6315US30D2-T MAX6315US30D3-T MAX6315US30D4-T MAX6315US31D1-T MAX6315US31D2-T MAX6315US31D3-T MAX6315US31D4-T MAX6315US32D1-T MAX6315US32D2-T MAX6315US32D3-T MAX6315US32D4-T MAX6315US33D1-T MAX6315US33D2-T MAX6315US33D3-T MAX6315US33D4-T MAX6315US34D1-T MAX6315US34D2-T MAX6315US34D3-T MAX6315US34D4-T MAX6315US35D1-T MAX6315US35D2-T MAX6315US35D3-T MAX6315US35D4-T MAX6315US36D1-T MAX6315US36D2-T MAX6315US36D3-T MAX6315US36D4-T MAX6315US37D1-T MAX6315US37D2-T MAX6315US37D3-T MAX6315US40D1-T MAX6315US40D2-T MAX6315US40D3-T MAX6315US40D4-T MAX6315US41D1-T MAX6315US41D2-T MAX6315US41D3-T MAX6315US41D4-T MAX6315US42D1-T MAX6315US42D2-T MAX6315US42D3-T MAX6315US42D4
Description Open-drain SOT μP Reset Circuit
Open-drain SOT 渭P Reset Circuit
Open-drain SOT P Reset Circuit
Cartridge Fuse; Current Rating:20A; Voltage Rating:600V; Fuse Type:Time Delay; Diameter:20.574mm; Fuse Terminals:Ferrule; Leaded Process Compatible:No; Length:57.15mm; Peak Reflow Compatible (260 C):No; Series:LPJ RoHS Compliant: No
SOCKET, 28 PIN, MACHINE, 0.6" WIDE, 0.1" L.S. 1-CHANNEL poWER SUPPLY SUPpoRT CKT, PDSO4
Open-drain SOT レP Reset Circuit 1-CHANNEL poWER SUPPLY SUPpoRT CKT, PDSO4
ADAPTER SOWIC TO DIP 24 poS 1-CHANNEL poWER SUPPLY SUPpoRT CKT, PDSO4
Open-drain microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1120ms.

File Size 111.53K  /  8 Page

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    HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4006B HCC4006B HCC4006BF HCF4006
Description    18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor polarity:N Channel; drain Source Voltage, Vds:60V; Continuous drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器

File Size 259.15K  /  11 Page

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    SP8855 SP8855E

Mitel Semiconductor
MITEL[Mitel Networks Corporation]
Part No. SP8855 SP8855E
Description 2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor polarity:N Channel; drain Source Voltage, Vds:30V; Continuous drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test

File Size 168.71K  /  14 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. IRFF110 IRFF111 IRFF112 IRFF113
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.0A.
power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST662ACD ST662ACN 5068

http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
Part No. ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST662ACD ST662ACN 5068
Description From old datasheet system
DC-DC CONVERTER FROM 5v TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
MOSFET; Transistor polarity:N Channel; drain Source Voltage, Vds:40V; Continuous drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test

File Size 130.52K  /  12 Page

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    IRFF130 IRFF131 IRFF132 IRFF133

General Electric Solid State
GE Solid State
Part No. IRFF130 IRFF131 IRFF132 IRFF133
Description N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE poWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. drain-sourge voltage 100V. Continuous drain current 7.0A.

File Size 161.86K  /  5 Page

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    HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4

ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B HCC4001 HCC4001B HCC_HCF4001B HCF4025BM1 HCC_HCF4025B HCF4025BEY HCC4000 HCC4000B HCC4000BF HCC4001BF HCC4002 HCC4002B HCC4002BF HCC4025 HCC4025B HCC4025BF HCF4000BC1 HCF4000BEY HCF4000BM1 HCF4001BC1 HCF4001BEY HCF4001BM1 HCF4002BC1 HCF4002BEY HCF4002BM1 HCF4025 HCF4025B HCF4025BC1 HCC4002B-4025B HCF4002B-4025B HCF4000B-4001B HCC4000B-4001B FXXXXBM1 HCCXXXXBF 4000B 4002B
Description    NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF po- .75W
T-NPN- SI-po & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor polarity:P Channel; Continuous drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous drain Current - 100 Deg C:7.5A; Continuous drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A

File Size 288.46K  /  13 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
Part No. HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K HCS05KMSR
Description Inverter, Hex, Open drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V

File Size 106.16K  /  7 Page

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For common drain p-channel 1 5v po Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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