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				AD[Analog Devices]
Part No.	DAC10GP DAC10GS DAC10GX DAC10FX DAC10
OCR Text	...ER SUPPLY SENSITIVITY NL DNL tS CO tPLH tPHL VOC TCIFS IFSS IZS IFR DI/dt IB PPS/FS+ PPS/FS- 4.5 V V+ -18 V -18 V V- -10 V VS = 15 V; I...packaged parts, unless otherwise noted. 2 JA is specified for worst case mounting conditions, i.e., ...
Description	10-Bit High Speed Multiplying D/A Converter Universal Digital Logic Interface
File Size	291.13K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5803D2 IRF5803D2TR
OCR Text	co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint A A S G 1 8 K K D D VDSS = -40V RDS(on) = 112m Schottky Vf = 0.51V 2 7 ...
Description	FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) -40V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY?/a> MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)
File Size	125.10K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
OCR Text	...lectronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to you...packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM...
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size	181.71K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
OCR Text	...lectronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to you...packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1A-C12/C1...
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
File Size	167.22K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8
OCR Text	...lectronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to you...packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1B-C8/C10...
Description	128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作，旋转频出。在经营商业和工业温度范围 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作，旋转频出。在经营商业和工业温度范围 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
File Size	168.46K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
OCR Text	...lectronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to you...packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1C-C10/C1...
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
File Size	130.06K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] Samsung Semiconductor Co., Ltd.
Part No.	K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012
OCR Text	...lectronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to you...packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. 64K x 16 Bit High-Speed CMOS...
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作 64K X 16 STANDARD SRAM, 10 ns, PDSO44
File Size	258.35K / 11 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI M5M5V108CFP-70XI M5M5V108CKR-10HI M5M5V108CKR-10XI M5M5V108CKR-70HI M5M5V108CKR-70XI M5M5V108CKV-10HI M5M5V108CKV-10XI M5M5V108CKV-70HI M5M5V108CKV-70XI M5M5V108CRV-10HI M5M5V108CRV-10XI M5M5V108CRV-70HI M5M5V108CRV-70XI M5M5V108CVP-10HI M5M5V108CVP-10XI M5M5V108CVP-70HI M5M5V108CVP-70XI D98003 M5M5V108KV-10XI M5M5V008CKV-55HI M5M5V008CKV-55XI M5M5V008CKV-70HI M5M5V008CKV-70XI M5M5V008CRV-55HI
OCR Text	...ess otherwise noted) Symbol CI CO Parameter Input capacitance Output capacitance Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Min Limits Typ Max 6 10 Unit pF pF Note 1: Direction for current flowing into an IC is...
Description	1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
File Size	85.64K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V108CFP-10H M5M5V108CFP-10X M5M5V108CFP-70H M5M5V108CFP-70X M5M5V108CKR-10H M5M5V108CKR-10X M5M5V108CKR-70H M5M5V108CKR-70X M5M5V108CKV-10H M5M5V108CKV-10X M5M5V108CKV-70H M5M5V108CKV-70X M5M5V108CVP-10H M5M5V108CVP-10X M5M5V108CVP-70H M5M5V108CVP-70X D98001 M5M5V108CRV-10H M5M5V108CRV-10X
OCR Text	...ess otherwise noted) Symbol CI CO Parameter Input capacitance Output capacitance Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Min Limits Typ Max 6 10 Unit pF pF Note 1: Direction for current flowing into an IC is...
Description	From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
File Size	85.45K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5M5V108DKR-70HI
OCR Text	...ess otherwise noted) Symbol CI CO Parameter Input capacitance Output capacitance Test conditions VI=GND, VI=25mVrms, f=1MHz VO=GND,VO=25mVrms, f=1MHz Min Limits Typ Max 8 10 Unit pF pF Note 1: Direction for current flowing into an IC is...
Description	1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
File Size	57.87K / 8 Page	View it Online	Download Datasheet

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