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For bvdss Found Datasheets File :: 12485    Search Time::0.875ms    
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    Supertex, Inc.
Part No. VN2222LL-P002 VN2222LL-P014-G VN2222LL-P002-G VN2222LL-P013 VN2222LL-P003 VN2222LL-P013-G VN2222LL-P003-G
OCR Text ...kage Option TO-92 VN2222LL-G bvdss/BVDGS (V) RDS(ON) (max) () ID(ON) (min) (mA) 60 7.5 750 Pin Configuration DRAIN Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source ...
Description
File Size 338.52K  /  3 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8874 FDB8874NL
OCR Text ...x Units Off Characteristics bvdss IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TC = 150oC 30 1 250 100 V A nA On Character...
Description 30V N-Channel PowerTrench MOSFET

File Size 201.84K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8876
OCR Text ...x Units Off Characteristics bvdss IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V TA = 150oC 30 1 250 100 nA V A On Character...
Description N-Channel PowerTrench? MOSFET 30V, 71A, 8.5mOhm
N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm

File Size 252.27K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB8878
OCR Text ...x Units Off Characteristics bvdss bvdss TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, Referenced to 25oC ...
Description N-Channel Logic Level PowerTrench? MOSFET 30V, 48A, 14mOhm
N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm

File Size 215.84K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDC655BN
OCR Text ...ed Symbol Off Characteristics bvdss bvdss TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = 250 A ID = 250 ...
Description Single N-Channel, Logic Level, PowerTrench MOSFET

File Size 524.63K  /  6 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDD13AN06A0 FDD13AN06A0NL
OCR Text ...R = 0 tAV = (L)(IAS)/(1.3*RATED bvdss - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED bvdss - VDD) +1] 100s STARTING TJ = 25o C 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10 STARTING TJ = 150oC 1 SINGLE ...
Description RECTIFIER SCHOTTKY SINGLE 3A 40V 80A-ifsm 0.5V-vf 0.5mA-ir DO-201AD 500/BULK 9.9 A, 60 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel PowerTrench MOSFET, 60V, 50A, 0.0135

File Size 218.70K  /  11 Page

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    http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FDD14AN06LA0
OCR Text ...x Units Off Characteristics bvdss IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V V DS = 50V VGS = 0V VGS = 20V TC = 150oC 60 1 250 100 V A nA On Characte...
Description N-Channel PowerTrench MOSFET 60V, 50A, 14.6mohm
N-Channel Power Trench #174 MOSFET, 60V, 50A, 14mOhms

File Size 164.53K  /  11 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FDD16AN08A0 FDD16AN08A0NL
OCR Text ...R = 0 tAV = (L)(IAS)/(1.3*RATED bvdss - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED bvdss - VDD) +1] 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms STARTING T J = 25o C 10 1 SINGLE PULSE TJ = MAX RATED TC = 25...
Description Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>

File Size 180.66K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDD20AN06A0
OCR Text ...R = 0 tAV = (L)(IAS)/(1.3*RATED bvdss - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED bvdss - VDD) +1] IAS, AVALANCHE CURRENT (A) 100 1ms 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 SINGLE PULSE TJ = MAX RATED TC = 25o C ...
Description N-Channel PowerTrench MOSFET

File Size 544.23K  /  11 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDD2670
OCR Text ...Note 1) Off Characteristics bvdss bvdss TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 160 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 200 214 1 100 -100 V mV/C A NA NA On Characteristics ...
Description 200V N-Channel PowerTrench MOSFET

File Size 90.45K  /  5 Page

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For bvdss Found Datasheets File :: 12485    Search Time::0.875ms    
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