| |
|
 |
Infineon
|
| Part No. |
T458BPA
|
| OCR Text |
...7hfkqrorj\gdwd chip thickness 95m chip size 4,2 mm * 1,8 mm bond pads 100 m * 100 m bond pad material au (plated gold) chip passivation sin (silicon nitride) 5hfrpphqgdwlrqri%rqglqj&rqglwlrqv 7khuprfrpsuhvvlrq 1dlokhdgzlwkrxw xowudv... |
| Description |
17 - 24 GHz GaAs Power Amplifier / Driver MMIC
|
| File Size |
70.98K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| Part No. |
AON6500
|
| OCR Text |
95m w r ds(on) (at v gs = 4.5v) < 1.3m w symbol v ds v gs drain-source voltage 30 ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free co... |
| Description |
30V N-Channel AlphaMOS
|
| File Size |
266.58K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
Rochester Electronics, LLC
|
| Part No. |
CES2301
|
| OCR Text |
95m (typ) @v gs =-4.5v. high dense cell design for low r ds(on) . rugged and reliable. sot-23 package. absolute maximum ratings (t a =25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds v gate-source voltage v... |
| Description |
-20V P Channel MOS - 20V的P通道马鞍
|
| File Size |
50.71K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| Part No. |
AO6702
|
| OCR Text |
...m ? (v gs = 2.5v) r ds(on) < 95m ? (v gs = 1.8v) schottky v ds (v) = 20v, i f = 1a, v f <0.5v@0.5a the ao6702 uses advanced trench technology to provide excellent r and low gate charge. a schottky diode is provided to facilitate t... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor with Schcttky Diode
|
| File Size |
235.36K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
