900v pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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900v Datasheet PDF File

For 900v Found Datasheets File :: 1612 Search Time::1.203ms
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				Infineon
Part No.	SIDC56D170E6
OCR Text	...t rr2 di/dt=1100a/ m s v r =900v t j = 150 c ns i rrm1 t j = 25 c 55 peak recovery current i rrm2 i f =75a di/dt=1100a/ m s v r =900v t j = 150 c 85 a q rr1 t j =25 c 9 reverse re...
Description	Diodes - HV Chips - SIDC56D170E6, 1700V, 75A
File Size	65.09K / 4 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	W9NK90Z
OCR Text	900v - 1.1 - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z VDSS 900v 900v 900v 900v RDS(on) <1.3 <1.3 <1.3 <1.3 ID 8A 8A 8A 8A Pw 160 W 3 ...
Description	Search --To STW9NK90Z
File Size	582.60K / 16 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTGS50X170E2
OCR Text	...witching (25C) VGE = 15V VBus = 900v IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 50A RG = 30 Min Typ 3500 100 100 800 30 100 100 900 30 30 Max Unit pF ns ns mJ Reverse diode ratings and charac...
Description	3 Phase Bridge - IGBT 3 Phase bridge NPT IGBT Power Module
File Size	181.79K / 3 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTGS50X170E3
OCR Text	...witching (25C) VGE = 15V VBus = 900v IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 50A RG = 30 Min Typ 3500 100 100 800 30 100 100 900 30 14.5 Max Unit pF ns ns mJ Reverse diode ratings and c...
Description	3 Phase Bridge - IGBT 3 Phase bridge NPT IGBT Power Module
File Size	210.75K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPF40F
OCR Text	... C Fast Speed IGBT VCES = 900v VCE(sat) 3.3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v,@Vge=15V, Ic=17A)
File Size	222.15K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP5NC90ZFP STB5NC90ZT4
OCR Text	900v - 2.1 w - 4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate ...
Description	N-CHANNEL 900v 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET
File Size	521.94K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPF30F
OCR Text	... C Fast Speed IGBT VCES = 900v VCE(sat) 3.7V @VGE = 15V, I C = 11A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)
File Size	219.70K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPF20F
OCR Text	... C Fast Speed IGBT VCES = 900v VCE(sat) 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=5.3A)
File Size	223.56K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGBF30F IRGBF30
OCR Text	... C Fast Speed IGBT VCES = 900v VCE(sat) 3.7V @VGE = 15V, IC = 11A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transi...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)
File Size	217.06K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGBF20F IRGBF20
OCR Text	... C Fast Speed IGBT VCES = 900v VCE(sat) 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vce=900v, @Vge=15V, Ic=5.3A)
File Size	218.25K / 6 Page	View it Online	Download Datasheet

For 900v Found Datasheets File :: 1612 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |