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  900v Datasheet PDF File

For 900v Found Datasheets File :: 1612    Search Time::1.203ms    
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    Infineon
Part No. SIDC56D170E6
OCR Text ...t rr2 di/dt=1100a/ m s v r =900v t j = 150 c ns i rrm1 t j = 25 c 55 peak recovery current i rrm2 i f =75a di/dt=1100a/ m s v r =900v t j = 150 c 85 a q rr1 t j =25 c 9 reverse re...
Description Diodes - HV Chips - SIDC56D170E6, 1700V, 75A

File Size 65.09K  /  4 Page

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    W9NK90Z

STMicroelectronics
Part No. W9NK90Z
OCR Text 900v - 1.1 - 8A - TO-220 /FP- D2PAK - TO-247 Zener-protected superMESHTM MOSFET General features Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z VDSS 900v 900v 900v 900v RDS(on) <1.3 <1.3 <1.3 <1.3 ID 8A 8A 8A 8A Pw 160 W 3 ...
Description Search --To STW9NK90Z

File Size 582.60K  /  16 Page

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    APTGS50X170E2

Advanced Power Technology
Part No. APTGS50X170E2
OCR Text ...witching (25C) VGE = 15V VBus = 900v IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 50A RG = 30 Min Typ 3500 100 100 800 30 100 100 900 30 30 Max Unit pF ns ns mJ Reverse diode ratings and charac...
Description 3 Phase Bridge - IGBT
3 Phase bridge NPT IGBT Power Module

File Size 181.79K  /  3 Page

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    APTGS50X170E3

Advanced Power Technology
Part No. APTGS50X170E3
OCR Text ...witching (25C) VGE = 15V VBus = 900v IC = 50A RG = 30 Inductive Switching (125C) VGE = 15V VBus = 900v IC = 50A RG = 30 Min Typ 3500 100 100 800 30 100 100 900 30 14.5 Max Unit pF ns ns mJ Reverse diode ratings and c...
Description 3 Phase Bridge - IGBT
3 Phase bridge NPT IGBT Power Module

File Size 210.75K  /  3 Page

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    IRF[International Rectifier]
Part No. IRGPF40F
OCR Text ... C Fast Speed IGBT VCES = 900v VCE(sat) 3.3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v,@Vge=15V, Ic=17A)

File Size 222.15K  /  6 Page

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    ST Microelectronics
Part No. STP5NC90ZFP STB5NC90ZT4
OCR Text 900v - 2.1 w - 4.6a to-220/fp/d2pak/i2pak zener-protected powermesh?iii mosfet n typical r ds (on) = 2.1 w n extremely high dv/dt and capability gate to - source zener diodes n 100% avalanche tested n very low gate input resistance n gate ...
Description N-CHANNEL 900v 2.1 OHM 4.6A TO-220 TO-220FP I2PAK D2PAK ZENER-PROTECTED POWERMESH III MOSFET

File Size 521.94K  /  13 Page

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    IRF[International Rectifier]
Part No. IRGPF30F
OCR Text ... C Fast Speed IGBT VCES = 900v VCE(sat) 3.7V @VGE = 15V, I C = 11A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar trans...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)

File Size 219.70K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGPF20F
OCR Text ... C Fast Speed IGBT VCES = 900v VCE(sat) 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=5.3A)

File Size 223.56K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGBF30F IRGBF30
OCR Text ... C Fast Speed IGBT VCES = 900v VCE(sat) 3.7V @VGE = 15V, IC = 11A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transi...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900v, @Vge=15V, Ic=11A)

File Size 217.06K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGBF20F IRGBF20
OCR Text ... C Fast Speed IGBT VCES = 900v VCE(sat) 4.3V @VGE = 15V, I C = 5.3A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar tran...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vce=900v, @Vge=15V, Ic=5.3A)

File Size 218.25K  /  6 Page

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For 900v Found Datasheets File :: 1612    Search Time::1.203ms    
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