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  800v 6a Datasheet PDF File

For 800v 6a Found Datasheets File :: 865    Search Time::0.828ms    
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    SavantIC
Part No. 2SC3460
OCR Text ...afe operation applications 800v/6a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v...
Description SILICON POWER TRANSISTOR

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    7N80Z 7N80ZL-TF1-T 7N80ZG-TF1-T

Unisonic Technologies
Part No. 7N80Z 7N80ZL-TF1-T 7N80ZG-TF1-T
OCR Text ... ltd qw-r502-929, a 7 a , 800v n-channel power mosfet ? description the utc 7n80z is an n-channel mode power mosfet using ...6a, v dd = 50v, r g =25 ? , starting t j =25c 3. i sd 8a, di/dt 200a/ s, v dd bv dss , star...
Description 7A, 800v N-CHANNEL POWER MOSFET

File Size 252.83K  /  6 Page

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    SSFP7N80

GOOD-ARK Electronics
Part No. SSFP7N80
OCR Text ...cturing repeatability VDSS = 800v ID25 = 6.6a RDS(ON) = 1.9 Description StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing den...
Description StarMOST Power MOSFET

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    FQA13N80

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA13N80
OCR Text 800v N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...6a, 800v, RDS(on) = 0.75 @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30 pF) Fast...
Description 800v N-Channel MOSFET

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    2SC4429

Inchange Semiconductor Company Limited
Part No. 2SC4429
OCR Text ...gh Breakdown Voltage: V(BR)CEO= 800v(Min) *Fast Switching speed *Wide Area of Safe Operation APPLICATIONS *Designed for switching regulat...6a ; VCE= 5V IC= 3A ; VCE= 5V .cn mi e 10 8 155 15 IE= 0 ; VCB= 10V; ftest=1.0MHz pF MHz ...
Description isc Silicon NPN Power Transistor

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    2SC3798

Inchange Semiconductor Company Limited
Part No. 2SC3798
OCR Text ...se Breakdown Voltage: V(BR)CBO= 800v(Min.) *Low Collector Saturation Voltage *High Speed Switching * APPLICATIONS *Designed for high s...6a B 1.0 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 3A; IB= 0.6a B ...
Description Silicon NPN Power Transistor

File Size 205.38K  /  2 Page

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    2SC3796

Inchange Semiconductor Company Limited
Part No. 2SC3796
OCR Text ...kdown voltage- : v (br)cbo = 800v(min.) low collector saturation voltage high speed switching applications designed for high...6a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 0.6a b 1.5 v i...
Description isc Silicon NPN Power Transistor

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    NTE2597

NTE Electronics
Part No. NTE2597
OCR Text .... . . . . . . . . . . . . . . . 800v Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6a Collector Dissipation, PD TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description Silicon NPN Transistor High Voltage, High Speed Switch

File Size 23.08K  /  2 Page

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    IRFAG50 IRFAG50-15

International Rectifier
Part No. IRFAG50 IRFAG50-15
OCR Text ...250mA VDS > 15V, IDS =3.5A VDS=800v, VGS=0V VDS =800v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS= 10V, ID=5.6a VDS =500V VDD =400V*, ID =5.6a, RG =2.35 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Sta...
Description 1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
HEXFET?TRANSISTORS 1000V, N-CHANNEL
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Simple Drive Requirements

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    2SC3460 2SC3460-2014

Quanzhou Jinmei Electronic Co.,Ltd.
Quanzhou Jinmei Electro...
Part No. 2SC3460 2SC3460-2014
OCR Text ...of safe operation APPLICATIONS 800v/6a switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMB...
Description Silicon NPN Power Transistors

File Size 108.73K  /  4 Page

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