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  800v 25a Datasheet PDF File

For 800v 25a Found Datasheets File :: 778    Search Time::1.266ms    
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    IRGP20B120U-EP

International Rectifier
Part No. IRGP20B120U-EP
OCR Text ... =20A; L=600H 16 14 12 600V 800v C ies CapacI tance (pF) 1000 10 V GE ( V ) 8 6 C oes 100 4 C res 2 0 10 0 20 40 60 80 100 0 40 80 120 160 200 V CE (V) Q G , Total Gate Charge (nC)...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 174.84K  /  10 Page

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    TT2274T

Sanyo Semicon Device
Part No. TT2274T
OCR Text ...S IEBO hFE1 hFE2 Conditions VCB=800v, IE=0A VCB=1400V, RBE=0 VEB=4V, IC=0A VCE=5V, IC=0.1A VCE=5V, IC=0.5A 15 4 Ratings min typ max 10 1 1 3...25a, IB=0.05A IC=0.5A, IB=0.1A IC=1mA, IE=0A IC=5mA, RBE= IE=1mA, IC=0A IC=0.5A, IB1=0.1A, IB2=--0.2...
Description NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

File Size 126.92K  /  4 Page

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    IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXGH25N100 IXGH25N100A IXGM25N100A IXGM25N100
OCR Text ...ff Safe Operating Area VCE = 800v IC = 25a IG = 10mA 10 IC - Amperes T J = 125C dV/dt < 3V/ns VGE - Volts 9 7 5 3 1 1 0.1 0.01 0 25 50 75 100 125 150 0 200 400 600 800 1000 Gate Charge - nCoulombs V CE - Vol...
Description Low VCE(sat), High speed IGBT 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
Low V High speed IGBT

File Size 103.50K  /  4 Page

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    GP30B120KD-E

International Rectifier
Part No. GP30B120KD-E
OCR Text ...charge (nc) v g e ( v ) 600v 800v fig.22 - typical capacitance vs v ce v ge =0v; f=1mhz 10 100 1000 10000 0 20406080100 v ce (v) c a p a c i t a n c e ( p f ) c ies c oes c res irgp30b120kd-e www.irf.com 9 fig.24 - normalized tran...
Description Search --To IRGP30B120KD-E

File Size 171.17K  /  12 Page

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    APTGF50DA120T1G

Microsemi Corporation
Part No. APTGF50DA120T1G
OCR Text ...ecovery Charge IF = 60A VR = 800v di/dt =200A/s ns nC www.microsemi.com APTGF50DA120T1G Thermal and package characteristics Sy...25a 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=25a 10 11 12 13 14 15 VGE, Gate to Emitter ...
Description Boost chopper NPT IGBT Power Module

File Size 314.15K  /  6 Page

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    APTGF50A120T1G

Microsemi Corporation
Part No. APTGF50A120T1G
OCR Text ...120T1G - Rev 0 IF = 60A VR = 800v di/dt =400A/s ns August, 2007 V APTGF50A120T1G Thermal and package characteristics Symbol...25a 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=25a 10 11 12 13 14 15 VGE, Gate to Emitter ...
Description Phase leg NPT IGBT Power Module

File Size 315.48K  /  6 Page

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    APTGT25X120T3G

Microsemi Corporation
Part No. APTGT25X120T3G
OCR Text ...IF = 60A IF = 30A IF = 30A VR = 800v Min 1200 Typ Max 100 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current D...25a TJ = 125C Reverse Bias Safe Operating Area 60 Eon 50 40 IC (A) Eoff 30 20 10 0 0 30...
Description 3 Phase bridge Trench Field Stop IGBT? Power Module
3 Phase bridge Trench Field Stop IGBT垄莽 Power Module

File Size 269.89K  /  5 Page

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    PS22056 PS2205612

Mitsubishi Electric Semiconductor
Part No. PS22056 PS2205612
OCR Text ...dead fPWM IO PWIN(on) 350 VCC 800v, 13.5 VD 16.5V, 13.5 VDB 16.5V, -20C TC 100C, N line wiring inductance less than 10nH (Note 9) Pa...25a 1.5 2.1 Typ. 600 15.0 15.0 -- -- -- -- -- -- Max. 800 16.5 16.5 1 -- 15 9.2 -- -- s 25 < Ic 42....
Description Dual-In-Line Package Intelligent Power Module
1200V/25a low-loss 4th generation IGBT inverter bridge

File Size 116.75K  /  9 Page

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    APTGV25H120BG

Microsemi Corporation
Part No. APTGV25H120BG
OCR Text ...IF = 60A IF = 30A IF = 30A VR = 800v di/dt =200A/s Min 1200 Typ Max 100 500 Unit V A A Maximum Reverse Leakage Current DC For...25a TJ = 125C Reverse Bias Safe Operating Area 60 Eon 50 40 IC (A) Eoff 30 20 10 0 0 30...
Description Boost chopper Full - Bridge NPT & Trench Field Stop IGBT Power module

File Size 445.42K  /  14 Page

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For 800v 25a Found Datasheets File :: 778    Search Time::1.266ms    
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