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				SeCoS Halbleitertechnologie GmbH
Part No.	STT2605
OCR Text	80m[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. Th...
Description	P-Channel Enhancement Mode Power Mos.FET
File Size	509.46K / 4 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	US201C
OCR Text	...he utc us201/a/b/c series are 80m ? high-side power switches. there?s internal single low voltage n-channel mosfet which makes it an ideal for all usb applications. this mosfet should be driven by a charge pump circuitry inside. its s...
Description	HIGH-SIDE POWER SWITCHES WITH FLAG
File Size	279.74K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	STC89C516RD STC89C51RC STC89C52RC STC89C53RC STC89C54RD STC89C55RD STC89C58RD STC89LE516AD STC89LE516RD STC89LE51RC STC89LE52RC STC89LE53RC STC89LE54RD STC89LE58RD STC12LE5402 STC12LE5402AD STC12LE5404 STC12LE5404AD STC12LE5406 STC12LE5406AD STC12LE5408 STC12LE5408AD STC12LE5410 STC12LE5410AD STC12LE5412 STC12LE5412AD STC12C5402 STC12C5402AD STC12C5404 STC12C5404AD STC12C5406 STC12C5406AD STC12C5408 STC12C5408AD STC12C5410 STC12C5410AD STC12C5412 STC12C5412AD
OCR Text	...y1/4 I I I I I I STC 89C51 RC 0 80M 4K 512 2K EEI C - I S PIAOOaIAE/ / EE Ii ST , 1 IoAE / I I I I I I STC 89C52 RC 0 80M 8K 512 2K i E(c)O\|AU1/4E x OAIcA*AAE MAX810 I I I I I I STC 89C53 RC 0 80M 15K 512 OOae3/4AOAU1/4ExOAIcA D O-I I I I...
Description	STC12C5410AD
File Size	1,231.92K / 149 Page	View it Online	Download Datasheet

				Pericom Semiconductor C...
Part No.	PI6C49018ZDIE
OCR Text	...ta input 10 gnd power ground 11 80m output 80 mhz lvcmos output. tri-state with weak pull- down when disabled 12 vdd power 3.3v supply pin 13 vdd power 3.3v supply pin 14 gndx power ground pin description 1 gnd 40 -p in qfn vdd gnd gnd vdd ...
Description	Low Power Networking Clock Generator
File Size	683.92K / 13 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FMM5815X
OCR Text	... 70m Pad Dimensions: 1. DC Pad: 80m x 80m VDD: 100m x 100m 2. RF Pad: 120m x 80m Unit: m 0 120 636 750 VDD3 1155 VDD4 VGG2 2380 3075 VDD5 3450 3570 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR,...
Description	17.5-20GHz Power Amplifier MMIC
File Size	231.03K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FMM5805X
OCR Text	...ss: 7020m Pad Dimensions: 1. DC 80m x 80m 2. RF 120m x 80m For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fu...
Description	17.5-20GHz Power Amplifier MMIC
File Size	2,126.07K / 4 Page	View it Online	Download Datasheet

				ROHM
Part No.	BD8311NUV BD8311NUV-E2
OCR Text	... supply line. the built-in 80m n -channel fet switch is capable of handling output current up to 2.5a. this ic has a flexible phase compensation system and a switching frequency of 1.2mhz allow ing the use of small...
Description	3.5-11V 0.8A 1ch Boost converter
File Size	732.61K / 24 Page	View it Online	Download Datasheet

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