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				SONY[Sony Corporation]
Part No.	CXB1575AQ
OCR Text	... VEE 3.069 to 3.465 VCC - VT1 1.8 to 2.2 VT2 VEE RT1 46 to 56 RT2 460 to 560 Ta -40 to +85 V V V C Sony reserves the right to change...Bit Error Rate Threshold: 1E - 10 -7- CXB1575AQ DC Electrical Characteristics Measurement C...
Description	155Mbps Clock & Data Recovery with High Sensitivity Limiting Amplifier
File Size	284.75K / 16 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
OCR Text	... command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new ...
Description	SDRAM - 64Mb 4 Banks x 1m x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1m x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1m x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
OCR Text	... command (Burst length of 1,2,4,8 or Full page), and the burst count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new ...
Description	4 Banks x 1m x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1m x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V1000BTS
OCR Text	... devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/deselect control and one output enable pin (OE) for output control. They feature high speed, low power, and a wide operating ...
Description	Asynchronous Silicon Gate 1m (131,072 words x8 bits) SRAM Static RAMs (1mb) Asynchronous Silicon Gate 1m (131,072 words x 8 bits) SRAM
File Size	177.14K / 9 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W1000BM LC35W1000BM-10U LC35W1000BM-70U
OCR Text	8 bits) SRAM Preliminary Overview The LC35W1000BM and LC35W1000BTS-70U/10U are asynchronous silicon gate CMOS static RAM devices with a 131,072-word by 8-bit structure. They provide two chip enable pins (CE1 and CE2) for device select/des...
Description	Asynchronous Silicon Gate 1m (131,072 words x 8 bits) SRAM Asynchronous Silicon Gate 1m (131,072 words x8 bits) SRAM
File Size	164.70K / 9 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F008SCT-L12
OCR Text	............. 7 a a 6 a 8 9 9 9 12 12 12 12 12 13 13 14 6.2.2 AC Input/Output Test Conditions.. ............... .26 27 6.2.3 DC C...Bit Configuration Performance ........................... 7.0 ADDITIONAL INFORMATION ..................
Description	Flash Memory
File Size	3,042.58K / 49 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	M68AR016DN70ZB1T M68AR016DN70ZB6T M68AR016DN70ZH1T M68AR016DN70ZH6T M68AR024D M68AR024DZH M68AR024DZB M68AR024DN70ZH1
OCR Text	...OMATIC POWER DOWN TFBGA48 (ZH) 8 x 10 mm (for Engineering Samples only) BGA BGA TFBGA48 (ZB) 6.5 x 10 mm October 2002 This is pr...bit) Low Power SRAM fabricated in STMicroelectronics advanced CMOS technology, organized as 1,048,57...
Description	1m X 16 STANDARD SRAM, 70 ns, PBGA48 16 MBIT (1m X16) 1.8V ASYNCHRONOUS SRAM 16 Mbit 1m x16 1.8V Asynchronous SRAM 16 MBIT (1m X16) 1.8V ASYNCHRONOUS SRAM Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:28; Circular Contact Gender:Socket; Circular Shell Style:Cable Receptacle; Insert Arrangement:28-17 RoHS Compliant: No AB 7C 3#8 4#12 PIN RECP 1600万x16 1.8异步SRAM ER 12C 12#16 SKT RECP LINE 1600万x16 1.8异步SRAM AB 12C 12#16 SKT RECP 1600万x16 1.8异步SRAM
File Size	143.90K / 19 Page	View it Online	Download Datasheet

				Dynex Semiconductor
Part No.	MAS281
OCR Text	...is provided in section 3.0. 1.1.8 INSTRUCTION FETCH REGISTERS The Instruction Counter (IC), Instruction A (IA), and Instruction B (IB) regis...bit address and points to the next instruction to be fetched, is loaded indirectly via reset, jump, ...
Description	MIL-STD-1750A Microprocessor
File Size	550.31K / 55 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MCM8A10 MCM8A10SG15
OCR Text	...11 VCC DAISY D2 VSS W3 Q3 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 A0 A2 VCC A4 A6 VSS A8 Q0 W0 VCC D1 A10 VSS DAISY Q2 W2 VCC D3 1m x 8 Bit Fast Static RAM Module The MCM8A10 is...
Description	1m x 8 Bit Fast Static RAM Module
File Size	79.38K / 8 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	MPD8021 MIC8021-0002 MIC8021-0001
OCR Text	...SFETs ......................... 8 Expitaxial JFET ................................................................. 1 200 and 10 high-voltage DMOS transistors ................. 3 6V and 12V Zener diodes ........................................
Description	Semicustom High-Voltage Array Summary Information
File Size	36.72K / 2 Page	View it Online	Download Datasheet

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