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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D2225UK D2225
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| OCR Text |
7 6 5
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V - 1GHz PUSH-PULL
FEATURES
H
K
L J E F G
M
* SIM...1MHz to 1GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sa... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,推拉)
METAL GATE RF SILICON FET
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| File Size |
14.16K /
2 Page |
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it Online |
Download Datasheet
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SEME-LAB[Seme LAB]
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| Part No. |
D2231UK D2229UK D2230 D2230UK D2231
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| OCR Text |
...LTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED
0.360 0.005
6
1.27 6.50 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 0.1...1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ =0.3A ID = 10mA VGS = 0 VDS = 0 V... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
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| File Size |
17.00K /
2 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
Semelab(Magnatec)
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| Part No. |
D2232UK D1212UK
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| OCR Text |
...URPOSE SILICON DMOS RF FET 5W - 7.2V - 850MHz SINGLE ENDED
0.360 0.005
6
1.27 6.50 0.15
2 1
0.47 2 PL. 0.80 4 PL. 4.90 0.15
7...1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 ... |
| Description |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-7.2V-850MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-7.2V-850MHz,单端)
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| File Size |
15.92K /
2 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
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| Part No. |
D2254UK D2254
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| OCR Text |
7 6 3 4 2
C
R A
F
5
Q O N M J K L
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 1GHz PUSH-PULL
FEATURES
...1MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(s... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
19.95K /
2 Page |
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it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
D2282UK
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| OCR Text |
...D APPLICATIONS * LOW Crss
1 .7 0 m ax. 10 m ax. 6 .7 6 .3 3 .1 2 .9
4
3 .7 7 .3 3 .3 6 .7
* SIMPLE BIAS CIRCUITS * LOW NOISE (Typi...1MHz VDS = 12.5V f = 1MHz VDS = 12.5V f = 1MHz VGS = 0 VGS = 0 VGS = -5V IDQ = 75mA VDS = 0 VDS = VG... |
| Description |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
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| File Size |
18.17K /
2 Page |
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it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
D2293UK D2293
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| OCR Text |
...://www.semelab.co.uk
Prelim. 7/99
D2293UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Condition...1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 ... |
| Description |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
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| File Size |
23.87K /
2 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D2294UK
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| OCR Text |
... 40
Typ.
Max. Unit
V 1 6 7 mA
mA
V S dB % --
VGS(th) Gate Threshold Voltage *
h
VSWR Load Mismatch Tolerance Ciss Coss Crss
72 60 6
pF pF pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle 2%
HAZARDOUS... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(15W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应15W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
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| File Size |
72.60K /
5 Page |
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it Online |
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TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D5028UK
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| OCR Text |
...125
Typ.
Max. Unit
V 6 1 7 mA A V mhos 0.1 V
VGS(th)match
TOTAL DEVICE
GPS VSWR Ciss Coss Crss Common Source Power Gain Drain...1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz 360 150 9 dB % -- pF pF pF
PER SIDE
VDS = 50V VDS = 50V
... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
82.93K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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